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AOSP62530 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is N. Review the specifications below when checking this part for your BOM.
The AOSP62530 is a 150V N-Channel AlphaSGT Trench Power MOSFET manufactured by Alpha & Omega Semiconductor Inc. It features a maximum drain-source voltage of 150V and a continuous drain current of 5A at VGS=10V. The device exhibits low on-resistance, with RDS(ON) less than 63mΩ at VGS=10V and less than 70mΩ at VGS=4.5V. It is designed for primary switching in 48V systems and includes comprehensive protection characteristics verified through 100% UIS and Rg testing.
Verify the specific ordering suffix matches the required package form factor. Confirm that the component meets all applicable export control regulations and legal requirements before procurement. Evaluate product suitability for intended applications as the manufacturer reserves the right to modify specifications without notice.
Select this component for designs requiring a 150V N-Channel MOSFET with a 5A continuous current rating. Ensure the gate drive voltage supports the specified RDS(ON) thresholds at either 10V or 4.5V. Verify thermal management capabilities against the junction-to-ambient resistance values provided in the datasheet.
This part belongs to the AlphaSGT family of trench power MOSFETs from Alpha & Omega Semiconductor Inc. The series focuses on optimizing conduction losses and switching speeds for efficient power conversion. The SO-8 package provides a compact footprint suitable for surface-mount assembly.
No public confirmed substitute part numbers are documented in the source material.
The maximum Drain-Source Breakdown Voltage (BVDSS) is 150V.
Yes, the datasheet specifies that the device undergoes 100% Unclamped Inductive Switching (UIS) testing.
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