Single FETs, MOSFETs AOSP62530 product image

AOSP62530

$0.45
  • Description:N
  • Series:AlphaSGT™
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR)

SKU:6607b4891719 Category: Brand:

  
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AOSP62530 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is N. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AOSP62530

  • Description:N
  • Series:AlphaSGT™
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):150 V
  • Current - Continuous Drain (Id) @ 25°C:5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:63mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id:2.7V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:20 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:675 pF @ 75 V
  • FET Feature:-
  • Power Dissipation (Max):3.1W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:8-SOIC
  • Package / Case:8-SOIC (0.154", 3.90mm Width)

Single FETs, MOSFETs datasheet and documents for AOSP62530

AOSP62530

Single FETs, MOSFETs Overview

The AOSP62530 is a 150V N-Channel AlphaSGT Trench Power MOSFET manufactured by Alpha & Omega Semiconductor Inc. It features a maximum drain-source voltage of 150V and a continuous drain current of 5A at VGS=10V. The device exhibits low on-resistance, with RDS(ON) less than 63mΩ at VGS=10V and less than 70mΩ at VGS=4.5V. It is designed for primary switching in 48V systems and includes comprehensive protection characteristics verified through 100% UIS and Rg testing.

Single FETs, MOSFETs Feature Summary

  • Utilizes AlphaSGT Trench technology to achieve low gate charge and low on-resistance.
  • Includes 100% Unclamped Inductive Switching (UIS) testing for enhanced ruggedness.
  • Features 100% Gate Resistance (Rg) testing to ensure consistent switching performance.

Single FETs, MOSFETs Applications

  • Primary switch for 48V power systems
  • General-purpose power management applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix matches the required package form factor. Confirm that the component meets all applicable export control regulations and legal requirements before procurement. Evaluate product suitability for intended applications as the manufacturer reserves the right to modify specifications without notice.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a 150V N-Channel MOSFET with a 5A continuous current rating. Ensure the gate drive voltage supports the specified RDS(ON) thresholds at either 10V or 4.5V. Verify thermal management capabilities against the junction-to-ambient resistance values provided in the datasheet.

Single FETs, MOSFETs Part Context

This part belongs to the AlphaSGT family of trench power MOSFETs from Alpha & Omega Semiconductor Inc. The series focuses on optimizing conduction losses and switching speeds for efficient power conversion. The SO-8 package provides a compact footprint suitable for surface-mount assembly.

Single FETs, MOSFETs Replacement Considerations

No public confirmed substitute part numbers are documented in the source material.

Single FETs, MOSFETs FAQ

What is the maximum drain-source breakdown voltage?

The maximum Drain-Source Breakdown Voltage (BVDSS) is 150V.

Is the device tested for inductive load switching?

Yes, the datasheet specifies that the device undergoes 100% Unclamped Inductive Switching (UIS) testing.

AOSP62530AOSP62530
$0.45
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