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AOSP66919 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is N. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for AOSP66919
- Description：N
- Series：AlphaSGT™
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：16A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：6.5mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id：2.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：66 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3420 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：3.1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-SOIC
- Package / Case：8-SOIC (0.154", 3.90mm Width)
Single FETs, MOSFETs datasheet and documents for AOSP66919
Single FETs, MOSFETs Overview
The AOSP66919 is an N-channel Power MOSFET from Alpha & Omega Semiconductor, designed for surface-mount applications. It features a drain-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 16 A at ambient temperature (Ta), with a power dissipation of 3.1 W (Ta). The device utilizes an 8-SOIC package. Key electrical characteristics include a maximum gate-source voltage (Vgs) of ±20 V and a threshold voltage (Vgs(th)) of 2.6 V max at 250 µA. It operates within a junction temperature range of -55°C to 150°C.
Single FETs, MOSFETs Feature Summary
- N-channel enhancement mode MOSFET technology
- Surface-mount construction in an 8-SOIC package
- High voltage capability of 100 V
Single FETs, MOSFETs Applications
- DC-DC converter circuits
- Power switching applications
- Load management systems
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix and package variant against the official datasheet, as distributor listings may reference similar part numbers like AONS66919 or AOZ series components. Confirm the manufacturer's current production status and RoHS compliance details directly from Alpha & Omega Semiconductor documentation before finalizing procurement specifications.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring a 100 V N-channel MOSFET in an 8-SOIC footprint. Ensure the thermal design accommodates the 3.1 W power dissipation rating at ambient temperature. Verify that the gate drive voltage aligns with the specified threshold and on-resistance characteristics for optimal efficiency in the target application circuit.
Single FETs, MOSFETs Part Context
This part belongs to Alpha & Omega Semiconductor’s discrete power MOSFET portfolio. The company specializes in high-performance power management solutions using advanced semiconductor processes. The AOSP66919 represents their standard silicon MOSFET offerings for general-purpose power switching tasks.
Single FETs, MOSFETs Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Cross-reference with the official datasheet for pin-compatible alternatives if necessary.
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