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Product Detailed Parameters
- Description：IGBT 650V 20A TO-220
- Series：Alpha IGBT™
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：20 A
- Current - Collector Pulsed (Icm)：30 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 10A
- Power - Max：150 W
- Switching Energy：180µJ (on), 130µJ (off)
- Input Type：Standard
- Gate Charge：24 nC
- Td (on/off) @ 25°C：12ns/91ns
- Test Condition：400V, 10A, 30Ohm, 15V
- Reverse Recovery Time (trr)：262 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220
- Grade：-
- Qualification：-
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Overview
The AOT10B65M2 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Alpha & Omega Semiconductor Inc. It features a collector-emitter voltage rating of 650V and a continuous collector current capacity of 10A to 20A, depending on the specific datasheet reference. The device utilizes a TO-220-3 through-hole package with a power dissipation rating of 75W. Key electrical parameters include a reverse recovery time of 262ns and an operating junction temperature range spanning from -55°C to 175°C.
Feature Summary
- High-voltage capability suitable for demanding power switching applications
- Robust thermal performance with a wide operating temperature range
- Through-hole mounting design for secure mechanical attachment
Applications
- Industrial motor control systems
- High-voltage power supply circuits
- Inverter and converter topologies
Procurement Notes
Verify the exact collector current rating (10A vs 20A) against the specific manufacturer datasheet revision, as sources vary. Confirm the TO-220-3 package type matches the target PCB footprint. Ensure the 650V voltage rating aligns with the system's peak voltage requirements. Check for RoHS compliance status if environmental regulations apply to the final assembly.
Selection Notes
Select this component when high blocking voltage and moderate current handling are required in a through-hole configuration. Consider the 262ns reverse recovery time for switching frequency limitations. Evaluate thermal management needs given the 75W dissipation rating. Compare against MOSFET alternatives if lower gate drive voltage or faster switching speeds are critical for the specific application design.
Part Context
This IGBT belongs to Alpha & Omega Semiconductor's discrete transistor lineup, targeting medium-power industrial applications. It complements the company's broader portfolio of MOSFETs and diodes. The TO-220 form factor ensures compatibility with standard heatsinking methods. It serves as a reliable solution for legacy designs requiring robust, high-voltage switching elements.
Replacement Considerations
Cross-reference with other 650V N-channel IGBTs in TO-220 packages. Verify pinout compatibility and thermal resistance values before substitution. Ensure the replacement part meets or exceeds the 262ns reverse recovery time specification.
