Single FETs, MOSFETs AOT290L product image

AOT290L

$3.41
  • Description:MOSFET N-CH 100V 18A/140A TO220
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tube

SKU:1635a4fe45e7 Category: Brand:

  
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AOT290L is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 100V 18A/140A TO220. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AOT290L

  • Description:MOSFET N-CH 100V 18A/140A TO220
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:18A (Ta), 140A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:3.5mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id:4.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:126 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:9550 pF @ 50 V
  • FET Feature:-
  • Power Dissipation (Max):2.1W (Ta), 500W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220
  • Package / Case:TO-220-3

Single FETs, MOSFETs datasheet and documents for AOT290L

AOT290L

Single FETs, MOSFETs Overview

The AOT290L is a 100V N-Channel MOSFET utilizing Trench technology for high-frequency switching. It features a maximum drain-source voltage of 100V and a continuous drain current of 140A at 25°C case temperature. The on-resistance is less than 3.5mΩ at VGS=10V, with a total gate charge of 126nC max. The device supports a junction temperature range from -55°C to 175°C and includes a soft recovery body diode.

Single FETs, MOSFETs Feature Summary

  • Optimized Trench MOSFET technology for efficient high-frequency switching performance
  • Extremely low combination of RDS(ON) and Crss to minimize power losses
  • Soft recovery body diode for controlled switching behavior
  • 100% tested for Unclamped Inductive Switching (UIS) capability

Single FETs, MOSFETs Applications

  • Boost converters
  • Synchronous rectifiers
  • Consumer power supplies
  • Telecom power supplies
  • Industrial power supplies
  • LED backlighting

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant required, as the datasheet covers both TO-220 (AOT290L) and TO-263 (AOB290L). Confirm thermal management requirements against the specified junction-to-case resistance values. Ensure the application design accounts for the absolute maximum ratings provided in the official documentation.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high current handling up to 140A and robust avalanche energy capabilities. Consider the low on-resistance for efficiency in synchronous rectification or boost topologies. Evaluate thermal dissipation needs based on the junction-to-ambient and junction-to-case resistance parameters provided.

Single FETs, MOSFETs Part Context

This part belongs to the Alpha & Omega Semiconductor lineup of N-Channel MOSFETs designed for power management. It utilizes advanced trench technology to balance conduction and switching losses. The device is intended for general-purpose power switching in various electronic systems.

Single FETs, MOSFETs Replacement Considerations

The datasheet identifies AOB290L as the companion part number, differing primarily by the surface mount TO-263 package compared to the through-hole TO-220 package of the AOT290L. Electrical characteristics remain consistent between these two variants.

Single FETs, MOSFETs FAQ

What is the maximum pulsed drain current?

The maximum pulsed drain current is 500A.

Is the device suitable for unclamped inductive switching?

Yes, the device is 100% UIS tested and has a rated avalanche energy capability.

What is the reverse recovery time of the body diode?

The body diode reverse recovery time is typically 65ns and maximally 91ns under specified test conditions.

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