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AOT29S50L is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 500V 29A TO220. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for AOT29S50L
- Description：MOSFET N-CH 500V 29A TO220
- Series：aMOS™
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：500 V
- Current - Continuous Drain (Id) @ 25°C：29A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：150mOhm @ 14.5A, 10V
- Vgs(th) (Max) @ Id：3.9V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：26.6 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：1312 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：357W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220
- Package / Case：TO-220-3
Single FETs, MOSFETs datasheet and documents for AOT29S50L
Single FETs, MOSFETs Overview
The AOT29S50L is a surface-mount N-channel power MOSFET from Alpha & Omega Semiconductor, utilizing the aMOS™ technology. It features a 500V drain-source voltage rating and supports a continuous drain current of 27A at case temperature. The device operates within a junction temperature range of -55°C to 150°C and offers a maximum power dissipation of 357W. Packaged in a TO-220 format, it provides robust performance for high-voltage switching applications.
Single FETs, MOSFETs Feature Summary
- N-channel enhancement mode construction
- High voltage blocking capability
- Low on-resistance design
- Lead-free package compliant with RoHS standards
Single FETs, MOSFETs Applications
- Industrial motor control systems
- Power supply circuits
- DC-DC converter topologies
Single FETs, MOSFETs Procurement Notes
Verify component authenticity through authorized distribution channels. Confirm datasheet revisions match production lot dates. Ensure storage conditions adhere to moisture sensitivity level requirements. Validate pinout compatibility during integration. Check for specific marking codes corresponding to manufacturing origin.
Single FETs, MOSFETs Selection Notes
Evaluate thermal management requirements against the specified power dissipation limits. Compare gate charge characteristics with driver capabilities. Assess voltage margins relative to circuit operating conditions. Consider package mounting constraints for heat sinking. Review threshold voltage specifications for logic interface compatibility.
Single FETs, MOSFETs Part Context
This component belongs to the aMOS™ series of power MOSFETs designed by Alpha & Omega Semiconductor. The series focuses on optimizing performance and cost through advanced packaging and process technology. These devices are engineered for high-efficiency power management solutions in demanding electronic environments.
Single FETs, MOSFETs Replacement Considerations
Cross-reference with other N-channel MOSFETs sharing identical 500V ratings and TO-220 packages. Verify that substitute parts meet or exceed the original drain current and on-resistance specifications. Ensure thermal resistance values are compatible with existing heatsink designs.
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