AOT66616L

Single FETs, MOSFETs Overview

The AOT66616L is a 60V N-Channel Power MOSFET utilizing AlphaSGT™ technology. It features a maximum drain-source voltage (BVDSS) of 60V and a continuous drain current (ID) of 140A at VGS=10V. The on-resistance (RDS(ON)) is less than 3.2mΩ at VGS=10V and less than 4.6mΩ at VGS=6V. Key electrical parameters include a gate threshold voltage (VGS(th)) ranging from 2.4V to 3.4V, total gate charge (Qg) of 60nC at 10V, and input capacitance (Ciss) of 2870pF. The device supports a pulsed drain current (IDM) of 330A and avalanche energy (EAS) of 184mJ with L=0.3mH. Thermal characteristics include a junction-to-case thermal resistance (RθJC) of 1.0°C/W and a maximum junction temperature of 150°C.

Single FETs, MOSFETs Feature Summary

• AlphaSGT™ Trench Technology for low RDS(ON) and excellent gate charge performance
• 100% Unclamped Inductive Switching (UIS) tested for robust operation
• 100% Gate Resistance (Rg) tested for reliability
• RoHS and Halogen-Free Compliant

Single FETs, MOSFETs Applications

• Synchronous Rectification in DC/DC Converters
• Synchronous Rectification in AC/DC Converters
• Industrial Drive applications
• Motor Drive applications

Single FETs, MOSFETs Procurement Notes

Verify the specific package type required for the application, as the AOT66616L designation corresponds to the TO-220 tube package. Ensure that the ordering suffix matches the desired form factor, noting that the tape and reel variant uses the AOB66616L part number. Confirm compliance requirements such as RoHS status directly with the manufacturer documentation before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high current handling up to 140A with low conduction losses below 3.2mΩ. The 60V rating suits 12V and 24V systems. Consider the thermal resistance of 1.0°C/W for heatsinking calculations. Verify that the gate drive voltage meets the minimum threshold for optimal RDS(ON) performance, particularly if operating at VGS=6V where resistance increases slightly.

Single FETs, MOSFETs Part Context

The AOT66616L belongs to the AlphaSGT™ family of N-Channel MOSFETs from Alpha & Omega Semiconductor. This series employs advanced trench gate technology to achieve superior figure of merit compared to standard planar devices. The product line targets high-efficiency power conversion and motor control applications, offering improved switching speeds and reduced thermal stress through optimized gate charge and on-resistance characteristics.

Single FETs, MOSFETs Replacement Considerations

The AOB66616L serves as the equivalent part number for the same electrical specifications but utilizes a TO-263 (D2PAK) tape and reel package instead of the TO-220 tube packaging found in the AOT66616L.