SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
AOT780A70L is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is N. Review the specifications below when checking this part for your BOM.
The AOT780A70L is a 700V N-Channel Power Transistor from the aMOS5 series, packaged in TO-220F. It features a maximum drain-source breakdown voltage of 800V and a continuous drain current of 7A at 25°C case temperature. The device exhibits a maximum on-resistance of 0.78Ω at VGS=10V and ID=1.4A. Key dynamic parameters include a total gate charge of 11.5nC and an input capacitance of 675pF. It supports a pulsed drain current of 28A and operates within a junction temperature range of -55°C to 150°C.
Verify the specific suffix 'L' corresponds to the TO-220F package variant when sourcing. Confirm that the component meets RoHS3 compliance standards as indicated in manufacturer documentation. Ensure thermal management designs account for the specified junction-to-case thermal resistance values provided in the datasheet.
Select this component for applications requiring high voltage isolation and moderate current handling capabilities. Consider the 0.78Ω on-resistance for conduction loss calculations at low currents. Evaluate the 11.5nC gate charge against driver capabilities to optimize switching speed and minimize switching losses in the target circuit design.
This part belongs to the Alpha & Omega Semiconductor aMOS5™ family of N-channel MOSFETs. It shares electrical characteristics with the AOT(B)780A70L series but differs in physical packaging. The TO-220F variant provides through-hole mounting options suitable for chassis or heatsink attachment in industrial environments.
Direct substitutes include the AOT780A70L (TO-220 package) and AOB780A70L (TO-263 DPAK package). These variants share identical electrical specifications but require verification of mechanical footprint compatibility during replacement.
The device has a dv/dt rating of 100 V/ns, indicating its capability to withstand rapid voltage transitions without unintended turn-on.
The maximum pulsed drain current (IDM) is 28A, limited by the junction temperature of 150°C.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.