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Product Detailed Parameters
- Description：IGBT 600V 23A TO-220F
- Series：Alpha IGBT™
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：23 A
- Current - Collector Pulsed (Icm)：20 A
- Vce(on) (Max) @ Vge, Ic：1.8V @ 15V, 5A
- Power - Max：31.2 W
- Switching Energy：140µJ (on), 40µJ (off)
- Input Type：Standard
- Gate Charge：9.4 nC
- Td (on/off) @ 25°C：12ns/83ns
- Test Condition：400V, 5A, 60Ohm, 15V
- Reverse Recovery Time (trr)：98 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3 Full Pack
- Supplier Device Package：TO-220F
- Grade：-
- Qualification：-
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Overview
The AOTF10B60D2 is a 600V, 10A Alpha IGBT with an integrated soft recovery diode in a TO-220F package. It features a collector-emitter saturation voltage of 1.55V at TJ=25°C and 1.8V at TJ=125°C. The device offers a maximum short-circuit withstand time of 10µs and a continuous collector current of 10A at TC=100°C. Thermal resistance from junction to case is 4°C/W for both the IGBT and diode. Gate threshold voltage ranges from 4V to 6V. Total switching energy is 0.18mJ at TJ=25°C and 0.27mJ at TJ=150°C under standard test conditions.
Feature Summary
- Robust short circuit capability with a 10µs withstand time.
- Optimized co-packaged soft recovery diode for motor control applications.
- Designed for ease of paralleling and minimal gate spike under high dV/dt conditions.
Applications
- Motor control systems
- Power conversion circuits
- Inductive load switching
Procurement Notes
Verify component authenticity through authorized distribution channels. Confirm datasheet revision matches the latest release. Ensure storage conditions comply with moisture sensitivity level requirements. Check for physical damage on leads and case before integration into assembly processes.
Selection Notes
Evaluate thermal management requirements based on the 4°C/W junction-to-case resistance. Consider gate resistor values to optimize switching speed versus electromagnetic interference. Verify that the 600V breakdown voltage exceeds peak circuit voltages. Assess short-circuit protection timing against the 10µs limit.
Part Context
This component belongs to the Alpha IGBT line from Alpha & Omega Semiconductor. It integrates a fast recovery diode within the same package to reduce parasitic inductance and improve efficiency in hard-switching topologies compared to discrete combinations.
Replacement Considerations
Direct pin-compatible substitutes include AOTF10B60D and AOB10B60D. Verify electrical parameters such as VCE(sat) and switching times match design requirements when cross-referencing alternative part numbers.
FAQ
What is the maximum short-circuit withstand time?
The device supports a short-circuit withstand time of 10 microseconds at TC=25°C with VGE=15V and VCE≤400V.
How does temperature affect the collector-emitter saturation voltage?
VCE(sat) increases with temperature, rising from a typical 1.55V at 25°C to 1.85V at 150°C.
What is the total gate charge value?
The total gate charge (Qg) is typically 9.4 nC measured at VGE=15V, VCE=480V, and IC=5A.
