SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
AOTF10N50FD is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 500V 10A TO220-3F. Review the specifications below when checking this part for your BOM.
The AOTF10N50FD is a 500V N-Channel MOSFET with an integrated fast recovery diode, manufactured by Alpha & Omega Semiconductor. It features a maximum continuous drain current of 10A at VGS=10V and a typical on-resistance of 0.6Ω (max 0.75Ω). The device includes guaranteed avalanche capability and has been tested for UIS and Rg. Key dynamic parameters include a total gate charge of 35nC max and a body-diode reverse recovery time of 190ns max. Thermal resistance junction-to-case is 2.5°C/W.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct package type and environmental compliance. Confirm that the component matches the intended thermal management requirements, as power dissipation limits are dependent on case temperature. Ensure compatibility with existing PCB footprints for the TO-220F package before finalizing procurement orders.
Select this component for designs requiring a 500V rating with integrated synchronous rectification capabilities. Consider the low gate charge and fast recovery diode characteristics for high-frequency switching efficiency. Evaluate the thermal resistance values against the system's heatsinking strategy to ensure operation within the specified junction temperature range under expected load conditions.
This part belongs to the AOTF series of N-Channel MOSFETs from Alpha & Omega Semiconductor. It utilizes an advanced high voltage process designed for offline power supplies. The 'F' in the model number typically denotes the TO-220F plastic encapsulated package variant, distinguishing it from other package options within the same electrical family.
Direct substitutes may include parts with matching 500V/10A ratings and similar RDS(on) specifications. Verify pinout compatibility and thermal characteristics when considering alternatives from other manufacturers.
The datasheet specifies a single pulsed avalanche energy (EAS) of 433 mJ and a repetitive avalanche energy (EAR) of 3.8 mJ.
Yes, it features an integrated fast recovery body diode with a maximum reverse recovery time (trr) of 190 ns.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.