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The AOTF20B65M1 is a 650V, 20A AlphaIGBT with an integrated soft and fast recovery anti-parallel diode. It features a collector-emitter saturation voltage of 1.7V at 25°C and 2.15V maximum at 25°C under 20A conditions. The device operates within a junction temperature range of -55°C to 150°C and offers a short-circuit withstand time of 5µs. Key electrical parameters include a total gate charge of 46nC, turn-off energy of 0.27mJ, and reverse recovery time of 322ns for the diode. Packaged in a TO-220F form factor, it provides high efficiency and low switching loss.
Verify the specific ordering suffix against official manufacturer documentation to confirm package type and testing conditions. Ensure compliance with export control rules and applicable legal requirements before procurement. Evaluate product suitability for intended applications as liability is not assumed for life support devices or systems.
Select based on required breakdown voltage and continuous current ratings relative to thermal management capabilities. Consider the trade-off between VCE(sat) and switching losses when determining optimal gate resistance values. Verify that the application does not exceed the specified short-circuit withstand time or junction temperature limits during operation.
This component belongs to the AlphaIGBT family from Alpha & Omega Semiconductor Inc., designed for hard switching applications. It integrates a high-performance freewheeling diode to minimize reverse recovery effects. The TO-220F package facilitates through-hole mounting for various industrial and consumer electronic power conversion circuits.
No public confirmed substitute part numbers are available in the provided documentation.