BIDW30N60T

$3.54

Description：IGBT TRENCH FS 600V 60A TO-247
Series：-

SKU:9d4a241a5758 Category: Single IGBTs Brand: Bourns Inc.

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 600V 60A TO-247
Series：-
Mfr：Bourns Inc.
Package：Tube
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：60 A
Current - Collector Pulsed (Icm)：90 A
Vce(on) (Max) @ Vge, Ic：1.65V @ 15V, 30A
Power - Max：230 W
Switching Energy：1.85mJ (on), 450µJ (off)
Input Type：Standard
Gate Charge：76 nC
Td (on/off) @ 25°C：30ns/67ns
Test Condition：400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr)：40 ns
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247
Grade：-
Qualification：-

Download product information

BIDW30N60T

Overview

The Bourns BIDW30N60T is a single N-channel Insulated Gate Bipolar Transistor (IGBT) with an integrated fast recovery diode, housed in a TO-247-3 package. It features a 600 V collector-emitter voltage rating and a continuous collector current of 60 A at 25 °C case temperature. The device utilizes trench-gate field-stop technology to achieve a low collector-emitter saturation voltage of 1.65 V at 30 A. Key electrical parameters include a maximum power dissipation of 230 W, a junction-to-case thermal resistance of 0.54 °C/W for the IGBT, and a short-circuit withstand time of 10 µs. Operating temperatures range from -55 °C to +150 °C.

Feature Summary

Advanced Trench-Gate Field-Stop technology provides optimized conduction characteristics and reduced switching losses.
Integrated built-in fast recovery diode (FRD) simplifies circuit design for high-voltage applications.
Low thermal resistance structure enhances heat dissipation and improves overall device robustness.

Applications

Switch-Mode Power Supplies (SMPS)
Uninterruptible Power Sources (UPS)
Power Factor Correction (PFC)
Induction heating

Procurement Notes

Verify component authenticity by checking the marking code against official Bourns documentation. Confirm RoHS compliance status as per Directive 2015/863. Ensure the specific ordering suffix matches the required packaging quantity of 30 pieces per tube. Validate that the device meets the intended application's safety standards before integration.

Selection Notes

Select this component for designs requiring high voltage isolation and efficient power handling. Consider the 600 V rating and 60 A continuous current capability for medium-power systems. Evaluate the thermal management requirements based on the 0.54 °C/W junction-to-case resistance. Ensure gate drive voltages remain within the ±20 V limit to prevent damage.

Part Context

This discrete IGBT belongs to the Bourns BID series, designed for general-purpose high-voltage switching. It combines MOS gate control with bipolar transistor conductivity modulation. The TO-247-3 package facilitates through-hole mounting, making it suitable for industrial and consumer electronics where reliable power conversion is essential.

Replacement Considerations

Direct substitutes are not explicitly listed in the provided datasheet. When evaluating alternatives, match the 600 V rating, TO-247-3 package, and similar VCE(sat) specifications. Verify that any replacement maintains comparable switching energy and thermal resistance values for equivalent performance.