AOTF29S50L

Single FETs, MOSFETs Overview

The AOTF29S50L is a surface-mount N-channel power MOSFET from Alpha & Omega Semiconductor, designed for high-voltage switching applications. It features a 500V drain-source voltage rating and supports a continuous drain current of 29A at case temperature. The device utilizes the aMOS™ technology and is housed in a TO-263 (D2PAK) package with three leads. Key electrical characteristics include a maximum gate-source voltage of ±30V and a threshold voltage of up to 3.9V at 250µA. At 10V gate drive, the on-resistance is typically 150mΩ at 14.5A, with a maximum gate charge of 26.6nC and input capacitance of 1312pF. It operates within a junction temperature range of -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

• High-voltage capability with 500V drain-source breakdown voltage for robust switching performance.
• Low on-resistance design to minimize conduction losses in power circuits.
• Integrated thermal management via TO-263 package for efficient heat dissipation.

Single FETs, MOSFETs Applications

• Medium to high-power motor drives
• Industrial power supplies
• Inverter circuits

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS3 compliance status and check for specific packaging options such as tape and reel or cut tape. Review datasheet revisions and product change notices for any updates to pinout or electrical specifications before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring 500V isolation and moderate current handling up to 29A. Ensure the driving circuit can supply sufficient gate charge without excessive delay. Verify that the PCB layout accommodates the TO-263 footprint and provides adequate copper area for thermal grounding to maintain safe operating temperatures under load.

Single FETs, MOSFETs Part Context

This part belongs to the aMOS™ series of power MOSFETs from Alpha & Omega Semiconductor. It serves as a high-performance discrete semiconductor solution for industrial and consumer electronics. The device is categorized under single FETs and is distinct from integrated power modules or low-voltage logic-level transistors.

Single FETs, MOSFETs Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Engineers should consult official replacement guides or contact the manufacturer directly for qualified alternatives.

Single FETs, MOSFETs FAQ

What is the maximum gate-source voltage rating?

The maximum gate-source voltage is rated at ±30V.

Is the device suitable for high-temperature environments?

Yes, it supports a junction temperature range from -55°C to 150°C.