SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The AOTF5B65M2 is a 650V AlphaIGBT in a TO-220F package, featuring a soft and fast recovery anti-parallel diode. It offers a collector-emitter saturation voltage of 1.57V at 25°C and 1.98V max at 15V/5A. The device supports a continuous collector current of 5A at 100°C and 10A at 25°C, with a pulsed collector current of 15A. Switching parameters include turn-on energy of 0.08mJ and turn-off energy of 0.07mJ at 150°C. Thermal resistance is 5°C/W junction-to-case for the IGBT and 7°C/W for the diode.
Verify the specific ordering suffix against official Alpha & Omega Semiconductor documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the requested quantity aligns with the manufacturer's minimum order requirements before finalizing procurement actions.
Select this component for designs requiring a 650V rating with integrated freewheeling diode capabilities. Ensure thermal management strategies account for the 5°C/W junction-to-case resistance. Verify gate drive compatibility with the specified threshold voltage and total gate charge values for optimal switching performance.
This part belongs to the AlphaIGBT series from Alpha & Omega Semiconductor. It utilizes advanced vertical process technology to achieve superior on-resistance and switching speed compared to standard IGBTs. The TO-220F form factor provides robust mechanical mounting and efficient heat dissipation for through-hole PCB implementations.
Public confirmed substitute part numbers are not available in the provided datasheet. Evaluate alternatives based on matching 650V breakdown voltage, 5A continuous current rating, and TO-220F package dimensions.
The device has a short-circuit withstand time of 5 microseconds when VGE=15V, VCC≤400V, and TJ≤150°C.
The diode forward voltage decreases as junction temperature increases, as shown in the typical electrical characteristics graph relating VF to Temperature.
The typical total gate charge is 14 nC, measured at VGE=15V, VCC=520V, and IC=5A.