AOTF66811L

$1.11

Description：N
Series：AlphaSGT2™
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)

SKU:62e62dff90ef Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

AOTF66811L is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is N. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AOTF66811L

Description：N
Series：AlphaSGT2™
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：39A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：8V, 10V
Rds On (Max) @ Id, Vgs：3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：110 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：5750 pF @ 40 V
FET Feature：-
Power Dissipation (Max)：8.3W (Ta), 34W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220F
Package / Case：TO-220-3 Full Pack

Single FETs, MOSFETs datasheet and documents for AOTF66811L

AOTF66811L

Single FETs, MOSFETs Overview

The AOTF66811L is an N-Channel AlphaSGT2™ MOSFET featuring a Drain-Source Voltage (VDS) of 80V. It supports a continuous drain current (ID) of 80A at TC=25°C and 39A at TA=25°C, with a pulsed drain current (IDM) of 320A. The device exhibits a maximum on-resistance (RDS(ON)) of less than 3mΩ at VGS=10V and 20A, and less than 3.4mΩ at VGS=8V. Total gate charge (Qg) is 110nC max at VGS=10V. Thermal resistance from junction to case (RθJC) is 3.6°C/W, while junction-to-ambient is 60°C/W. Power dissipation reaches 34W at TC=25°C and 8.3W at TA=25°C.

Single FETs, MOSFETs Feature Summary

Utilizes AlphaSGT2™ trench technology for low on-resistance and optimized switching performance.
Verified through 100% testing for Unclamped Inductive Switching (UIS) capability and gate resistance.

Single FETs, MOSFETs Applications

Industrial applications
Telecom power supplies
Server power supplies

Single FETs, MOSFETs Procurement Notes

Verify the specific package form factor before ordering, as datasheet listings indicate TO-220F Tube packaging, whereas distributor records may reference Tape & Reel variants. Confirm RoHS 2.0 compliance status and ensure the component meets HALOGEN-FREE requirements. Validate that the intended application does not involve life support systems, as such usage is explicitly unauthorized by the manufacturer.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high current handling in an 80V environment. The low RDS(ON) minimizes conduction losses, while the robust UIS rating ensures reliability under inductive load conditions. Evaluate thermal management strategies based on the specified junction-to-case and junction-to-ambient thermal resistances to maintain operation within the -55°C to 150°C junction temperature range.

Single FETs, MOSFETs Part Context

This part belongs to the AlphaSGT2™ series of N-Channel MOSFETs manufactured by Alpha & Omega Semiconductor Inc. It is designed for general-purpose power switching applications where efficiency and ruggedness are prioritized. The device integrates advanced trench gate technology to achieve superior figure-of-merit characteristics compared to standard planar MOSFETs.