Single FETs, MOSFETs AOTF66919L product image

AOTF66919L

$0.77
  • Description:N
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR)

SKU:3091a511010e Category: Brand:

  
  • Quantity
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AOTF66919L is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is N. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AOTF66919L

  • Description:N
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:25A (Ta), 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:6.5mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id:2.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:66 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:3420 pF @ 50 V
  • FET Feature:-
  • Power Dissipation (Max):8.3W (Ta), 32W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220F
  • Package / Case:TO-220-3 Full Pack

Single FETs, MOSFETs datasheet and documents for AOTF66919L

AOTF66919L

Single FETs, MOSFETs Overview

The AOTF66919L is a 100V N-Channel AlphaSGT™ Trench Power MOSFET manufactured by Alpha & Omega Semiconductor Inc. It features a TO-220F package with a maximum continuous drain current of 50A at VGS=10V and a maximum pulsed drain current of 200A. The device exhibits a low on-resistance of less than 6.5mΩ at VGS=10V and less than 8.5mΩ at VGS=4.5V. Key electrical parameters include a gate threshold voltage ranging from 1.5V to 2.6V, a total gate charge of 66nC at 10V, and an input capacitance of 3420pF. Thermal characteristics specify a junction-to-case resistance of 3.9°C/W and a junction-to-ambient resistance of 55°C/W.

Single FETs, MOSFETs Feature Summary

  • Utilizes AlphaSGT™ trench technology for optimized performance
  • Features logic level driving capability for efficient gate control
  • Demonstrates excellent figure of merit through low gate charge and on-resistance combination
  • Includes 100% unclamped inductive switching (UIS) testing

Single FETs, MOSFETs Applications

  • High frequency switching circuits
  • Synchronous rectification systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix and package type against official manufacturer documentation before procurement. Confirm that the component meets all required environmental standards, such as RoHS 2.0 compliance, and ensure compatibility with intended thermal management solutions. Cross-reference datasheet revision numbers to guarantee accurate parameter alignment with design specifications.

Single FETs, MOSFETs Selection Notes

Select this component based on its 100V breakdown voltage and 50A continuous current rating suitable for power management applications. Consider the TO-220F package for effective heat dissipation in high-power scenarios. Evaluate the low RDS(ON) values at both 10V and 4.5V gate voltages to ensure optimal efficiency and drive compatibility within the target circuit design constraints.

Single FETs, MOSFETs Part Context

This part belongs to the AlphaSGT™ series of N-Channel MOSFETs from Alpha & Omega Semiconductor Inc., designed for high-efficiency power switching. The AOTF66919L variant specifically utilizes a TO-220F form factor, distinguishing it from surface-mount counterparts like the AONS or AON series. It represents a discrete semiconductor solution focused on robust thermal handling and reliable operation in demanding electronic environments.

Single FETs, MOSFETs Replacement Considerations

Consult official manufacturer substitution guides for verified alternatives. Ensure any replacement maintains equivalent voltage, current, and thermal ratings while matching the physical package dimensions for direct integration without board modifications.

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