AOTF8N50

$0.43

Description：MOSFET N-CH 500V 8A TO220-3F
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tube

SKU:5af958061ec1 Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

AOTF8N50 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 500V 8A TO220-3F. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AOTF8N50

Description：MOSFET N-CH 500V 8A TO220-3F
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：500 V
Current - Continuous Drain (Id) @ 25°C：8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：850mOhm @ 4A, 10V
Vgs(th) (Max) @ Id：4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：28 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：1042 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：38.5W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220F
Package / Case：TO-220-3 Full Pack

Single FETs, MOSFETs datasheet and documents for AOTF8N50

AOTF8N50

Single FETs, MOSFETs Overview

The AOTF8N50 is a through-hole N-channel power MOSFET manufactured by Alpha & Omega Semiconductor. It features a drain-source voltage (Vdss) of 500 V and a continuous drain current (Id) of 8 A at case temperature. The device has a maximum power dissipation of 192 W at the case, with an on-resistance (Rds(on)) of 850 mΩ measured at 4 A and 10 V gate-source voltage. The gate threshold voltage is 4.5 V max at 250 µA, and the input capacitance is 1042 pF max at 25 V. It operates within a junction temperature range of -55°C to 150°C and is housed in a TO-220 package.

Single FETs, MOSFETs Feature Summary

High-voltage capability with 500 V drain-source breakdown voltage for robust switching applications.
Through-hole TO-220 packaging designed for efficient thermal management and high power dissipation.
Low on-resistance optimized for conduction efficiency under standard 10 V gate drive conditions.

Single FETs, MOSFETs Applications

High-voltage DC-DC converter circuits
Power factor correction (PFC) stages
Industrial motor control systems

Single FETs, MOSFETs Procurement Notes

Verify component authenticity against manufacturer specifications before integration. Confirm that the TO-220 package dimensions match the target PCB footprint. Ensure thermal interface materials are compatible with the specified 192 W case dissipation rating. Check for RoHS compliance status if environmental regulations apply to the final assembly.

Single FETs, MOSFETs Selection Notes

Select this component when a 500 V rating is required for high-side or low-side switching. The TO-220 package suits designs needing direct heatsink mounting. Compare Rds(on) performance against alternative packages like D2PAK for space-constrained layouts. Validate gate charge requirements against the available driver capability for optimal switching speed.

Single FETs, MOSFETs Part Context

This part belongs to the AOT(F)8N50 series from Alpha & Omega Semiconductor, focusing on medium-power discrete MOSFETs. The 'F' suffix typically denotes specific pinout or thermal characteristics within the TO-220 family. It serves as a general-purpose high-voltage switch in power electronics, distinct from logic-level or low-voltage variants.