AOTS26108

$0.15

Description：MOSFET N/P-CH 30V/20V 3.8A 6TSOP
Series：-

SKU:df988e127de9 Category: FET, MOSFET Arrays Brand: Alpha & Omega Semiconductor Inc.

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 30V/20V 3.8A 6TSOP
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel Complementary
FET Feature：-
Drain to Source Voltage (Vdss)：30V, 20V
Current - Continuous Drain (Id) @ 25°C：3.8A (Ta), 4.5A (Ta)
Rds On (Max) @ Id, Vgs：50mOhm @ 3.8A, 10V, 44mOhm @ 4.5A, 4.5V
Vgs(th) (Max) @ Id：1.5V @ 250µA, 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs：16nC @ 10V, 17nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：340pF @ 15V, 930pF @ 10V
Power - Max：1.25W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SC-74, SOT-457
Supplier Device Package：6-TSOP
Grade：-
Qualification：-

Download product information

AOTS26108

Overview

The AOTS26108 is a complementary MOSFET array featuring an N-channel and P-channel pair in a single TSOP-6 package. The N-channel device provides a drain-source voltage (VDS) of 30V with a continuous drain current (ID) of 3.8A at VGS=10V, while the P-channel offers -20V VDS and -4.5A ID at VGS=-4.5V. On-resistance for the N-channel is less than 50mΩ at VGS=10V and 57mΩ at VGS=4.5V. The P-channel on-resistance is under 44mΩ at VGS=-4.5V and 59mΩ at VGS=-2.5V. Total gate charge is 16nC at 10V for the N-channel and 17nC at 4.5V for the P-channel. The component operates within a junction temperature range of -55°C to 150°C.

Feature Summary

Complementary N-channel and P-channel configuration integrated into a compact surface-mount package
Trench Power MOSFET technology designed for low on-resistance and reduced gate charge
Logic-level gate drive compatibility supporting operation at VGS voltages as low as 2.5V

Applications

ESD protection circuits
Load switch implementations

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm exact packaging and compliance status. Confirm that the intended application does not involve life support systems, as such usage is explicitly unauthorized by Alpha & Omega Semiconductor. Ensure thermal management aligns with the specified junction-to-ambient resistance values provided in the datasheet.

Selection Notes

Select this component when space constraints require a matched complementary pair in a small outline package. Evaluate the gate threshold voltage requirements against the available drive voltage levels, noting the distinct performance metrics at 10V versus lower logic-level voltages. Consider the thermal characteristics relative to the expected duty cycle and ambient conditions.

Part Context

Alpha & Omega Semiconductor manufactures the AOTS26108 utilizing Trench Power MOSFET technology. This product line targets applications requiring efficient power switching in compact form factors. The company specializes in discrete power devices and power management solutions for consumer electronics and industrial equipment.

Replacement Considerations

No verified public substitute part numbers are documented for the AOTS26108.

FAQ

What is the maximum gate-source voltage rating?

The maximum gate-source voltage is ±12V for the N-channel and ±8V for the P-channel.

How does the on-resistance vary with gate voltage?

For the N-channel, RDS(ON) increases from less than 50mΩ at VGS=10V to less than 72mΩ at VGS=2.5V. For the P-channel, it rises from less than 44mΩ at VGS=-4.5V to less than 80mΩ at VGS=-1.8V.