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AOU7S65 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 600V 7A TO251-3. Review the specifications below when checking this part for your BOM.
The AOU7S65 is a 650V N-channel power MOSFET from Alpha & Omega Semiconductor, utilizing the αMOS™ process. It features a maximum drain-source voltage of 650V and continuous drain current of 7A at case temperature. Key electrical parameters include a typical gate charge of 9.2nC, maximum on-resistance of 0.65Ω at VGS=10V, and an effective output capacitance energy (Eoss) of 2μJ at 400V. The device supports a peak pulsed drain current of 30A and has been tested for 100% UIS capability.
Verify component authenticity through authorized distribution channels. Confirm datasheet revision status matches procurement requirements. Ensure storage conditions adhere to manufacturer specifications for moisture sensitivity level 1. Validate that the TO-252 package variant aligns with PCB footprint constraints before finalizing orders.
Select this component for designs requiring 650V blocking capability with moderate current handling. Consider the thermal resistance values when determining heatsinking requirements for continuous operation. Evaluate the gate charge characteristics against driver capabilities to optimize switching speed and minimize losses in high-frequency applications.
The AOU7S65 belongs to the AOD7S65/AOI7S65 family, sharing identical electrical specifications but differing in physical packaging. While the AOD7S65 uses a surface-mount TO-252 (DPAK) package, the AOU7S65 utilizes the TO-251 (IPAK) leaded package. This family is part of Alpha & Omega Semiconductor's αMOS™ product line focused on high-voltage discrete semiconductors.
Public confirmed substitute part numbers are not available in the provided source material.
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