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AOUS66620 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is N. Review the specifications below when checking this part for your BOM.
The AOUS66620 is a 60V N-Channel AlphaSGT™ Trench Power MOSFET in an UltraSO8 package. It features a drain-source breakdown voltage of 60V and a continuous drain current of 46A at VGS=10V. The on-resistance is less than 9mΩ at VGS=10V and less than 11.5mΩ at VGS=8V. Key dynamic parameters include a total gate charge of 25nC, input capacitance of 1070pF, and reverse transfer capacitance of 12pF. Thermal characteristics specify a junction-to-case resistance of 2.4°C/W and a junction-to-ambient resistance of 50°C/W.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm the exact package form factor and reel specifications. Ensure that the component meets all applicable RoHS and halogen-free compliance requirements mandated by your project standards before finalizing procurement.
Select this component for designs requiring a compact UltraSO8 footprint with high current handling capabilities up to 46A. Consider the thermal resistance values when designing heat dissipation strategies for synchronous rectification or general switching topologies operating within the specified temperature range.
Alpha & Omega Semiconductor manufactures the AOUS66620 as part of its AlphaSGT™ portfolio. This series integrates advanced trench process technology to deliver high-performance discrete power devices suitable for demanding power management applications across consumer and industrial electronics.
No public confirmed substitute part numbers are available in the provided documentation.
The maximum junction and storage temperature range is -55°C to 150°C.
Yes, the datasheet confirms that the AOUS66620 undergoes 100% unclamped inductive switching (UIS) testing.
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