AOUS66920

Description：N
Series：AlphaSGT™
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)

SKU:ad03ba6e1f8d Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

AOUS66920 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is N. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AOUS66920

Description：N
Series：AlphaSGT™
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：19.5A (Ta), 69A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：8.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：50 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2500 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：6.2W (Ta), 86W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：UltraSO-8™
Package / Case：3-PowerSMD, Flat Leads

Single FETs, MOSFETs datasheet and documents for AOUS66920

AOUS66920

Single FETs, MOSFETs Overview

The AOUS66920 is a 100V N-Channel Power MOSFET utilizing AlphaSGT™ Trench technology in an UltraSO8 package. It features a maximum drain-source voltage (BVDSS) of 100V and a continuous drain current (ID) of 69A at TC=25°C. The device exhibits a low on-resistance (RDS(ON)) of less than 8.2mΩ at VGS=10V and 10.7mΩ at VGS=4.5V. Key electrical parameters include a gate threshold voltage (VGS(th)) ranging from 1.5V to 2.5V, total gate charge (Qg) of 50nC at 10V, and input capacitance (Ciss) of 2500pF. Thermal characteristics specify a junction-to-case resistance (RθJC) of 1.45°C/W and a junction-to-ambient resistance (RθJA) of 50°C/W.

Single FETs, MOSFETs Feature Summary

Employs AlphaSGT™ Trench technology for optimized performance
Features logic-level driving capability with low gate threshold voltage
Demonstrates excellent figure of merit through low gate charge and on-resistance combination
Includes 100% testing for Unclamped Inductive Switching (UIS) and gate resistance

Single FETs, MOSFETs Applications

High frequency switching circuits
Synchronous rectification applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix corresponds to the required tape and reel configuration. Confirm that the component meets RoHS and halogen-free compliance requirements for your assembly process. Ensure the selected package variant matches the PCB footprint design constraints. Validate thermal management strategies against the specified junction-to-case and junction-to-ambient resistance values provided in the datasheet.

Single FETs, MOSFETs Selection Notes

Select this component when a 100V rating and high current capacity up to 69A are required in a compact surface-mount form factor. Consider the UltraSO8 package for space-constrained designs needing efficient heat dissipation via the exposed pad. Evaluate the low RDS(ON) specifications for efficiency-critical power paths. Verify compatibility with logic-level drive voltages if operating at VGS=4.5V.

Single FETs, MOSFETs Part Context

This part belongs to the AlphaSGT™ series of N-Channel MOSFETs manufactured by Alpha & Omega Semiconductor Inc. It is designed for general-purpose power switching applications requiring robust performance in a small outline package. The device integrates advanced trench gate technology to minimize conduction losses while maintaining fast switching speeds suitable for modern power supply topologies.