AOW360A70

Single FETs, MOSFETs Overview

The AOW360A70 is a 700V N-Channel Power MOSFET from Alpha & Omega Semiconductor, utilizing aMOS5 technology. It features a maximum drain-source voltage (BVDSS) of 800V and a continuous drain current (ID) of 7.6A at 25°C case temperature. The device has a maximum on-resistance (RDS(ON)) of 0.36Ω at VGS=10V and ID=6A. Key dynamic parameters include a total gate charge (Qg) of 22.5nC and a body diode reverse recovery time (Trr) of 310ns. It is available in TO-262 and TO-262F packages with junction temperatures up to 150°C.

Single FETs, MOSFETs Feature Summary

• High-voltage capability with an 800V breakdown rating for robust operation in high-stress environments.
• Integrated fast-recovery body diode designed to minimize reverse recovery losses during switching transitions.
• Advanced aMOS5 process technology ensures low on-resistance and efficient thermal performance.

Single FETs, MOSFETs Applications

• High-frequency power conversion circuits
• Isolated DC-DC converter topologies
• Motor control systems requiring high voltage tolerance

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant required, as the datasheet covers both AOW360A70 (TO-262) and AOWF360A70 (TO-262F). Confirm that the thermal resistance values align with your heatsinking strategy, as RqJC differs significantly between the two packages. Ensure design margins account for the 150°C maximum junction temperature limit under all operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component when a high-voltage N-channel MOSFET with moderate current handling is needed. The 800V BVDSS provides headroom above standard 700V ratings. Consider the TO-262F variant if lower thermal resistance is critical for your application, as it offers superior heat dissipation compared to the standard TO-262 package. Evaluate gate charge requirements against your driver capabilities.

Single FETs, MOSFETs Part Context

This part belongs to Alpha & Omega Semiconductor's aMOS5 family of power transistors. The series focuses on combining high voltage blocking capabilities with optimized switching characteristics. The AOW360A70 represents a specific configuration within this portfolio, tailored for applications demanding reliable performance in high-voltage power management scenarios.

Single FETs, MOSFETs Replacement Considerations

The AOWF360A70 is a pin-compatible alternative within the same datasheet, offering different thermal characteristics due to its TO-262F packaging. Verify thermal performance requirements before substituting, as the junction-to-case thermal resistance varies between the two physical packages.