AOWF095A60

$2.07

Description：MOSFET N-CH 600V 38A TO262F
Series：aMOS5™
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tube

SKU:fbbbccb190f2 Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

AOWF095A60 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 600V 38A TO262F. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AOWF095A60

Description：MOSFET N-CH 600V 38A TO262F
Series：aMOS5™
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：38A (Tj)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：95mOhm @ 19A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：78 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：4010 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：34.5W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-262F
Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA

Single FETs, MOSFETs datasheet and documents for AOWF095A60

AOWF095A60

Single FETs, MOSFETs Overview

The AOWF095A60 is a 700V N-Channel Power MOSFET utilizing proprietary αMOS5™ technology. It features a maximum drain-source voltage (BVDSS) of 700V and a continuous drain current (ID) of 38A at 25°C case temperature. The device exhibits a maximum on-resistance (RDS(ON)) of 0.095Ω at VGS=10V and ID=19A. Key dynamic parameters include a total gate charge (Qg) of 78nC, turn-on delay time of 48ns, and reverse recovery time (trr) of 444ns. The component is housed in a TO-262F package with a junction-to-case thermal resistance (RθJC) of 3.6°C/W.

Single FETs, MOSFETs Feature Summary

Proprietary αMOS5™ technology for low on-resistance
Optimized switching parameters to improve EMI performance
Enhanced body diode characteristics for robustness and fast reverse recovery

Single FETs, MOSFETs Applications

SMPS with PFC topologies
Flyback converter circuits
LLC resonant converter designs
Micro inverters with DC/AC inverter topology

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official Alpha & Omega Semiconductor documentation to confirm exact packaging and reel specifications. Confirm RoHS compliance status and REACH registration details prior to integration. Ensure the procurement channel provides valid traceability records matching the manufacturer's part number format.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage applications requiring optimized EMI performance. Evaluate the 700V breakdown voltage against system peak transients. Consider the 38A continuous current rating relative to thermal management requirements using the specified RθJC value. Verify that the gate charge characteristics align with the driving circuit capabilities.

Single FETs, MOSFETs Part Context

This N-Channel MOSFET belongs to the Alpha & Omega Semiconductor power transistor portfolio designed for efficient power conversion. It integrates advanced silicon technologies to minimize conduction losses while maintaining robust switching behavior suitable for modern power supply architectures.