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AOWF360A70 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 700V 12A TO262F. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for AOWF360A70
- Description：MOSFET N-CH 700V 12A TO262F
- Series：aMOS5™
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：700 V
- Current - Continuous Drain (Id) @ 25°C：12A (Tj)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：360mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：22.5 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1360 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：29.5W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-262F
- Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA
Single FETs, MOSFETs datasheet and documents for AOWF360A70
Single FETs, MOSFETs Overview
The AOWF360A70 is a 700V N-Channel Power MOSFET in a TO-262F package. It features a drain-source breakdown voltage of 800V and a continuous drain current of 7.6A at 25°C case temperature. The maximum on-resistance is 0.36Ω at VGS=10V and ID=6A. Total gate charge is 22.5nC, with input capacitance of 1360pF. Thermal resistance junction-to-case is 4.2°C/W, with power dissipation rated at 7.6W. Operating temperature range spans -55°C to 150°C.
Single FETs, MOSFETs Feature Summary
- High-voltage capability with 800V breakdown rating for robust operation
- Low on-resistance design supporting efficient power switching
- Integrated body diode with defined reverse recovery characteristics
- Thermal management optimized via low junction-to-case resistance
Single FETs, MOSFETs Applications
- High-voltage DC-DC converter circuits
- Motor control systems requiring high blocking voltage
- Industrial power supply topologies
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix 'F' corresponds to the TO-262F package variant when sourcing. Confirm datasheet revision matches the required electrical parameters. Ensure thermal interface materials are compatible with the specified junction-to-case resistance values for proper heat dissipation in final assembly.
Single FETs, MOSFETs Selection Notes
Select this component for applications demanding high voltage isolation and moderate current handling. Compare total gate charge against driver capabilities to ensure adequate switching speed. Evaluate thermal resistance requirements against system heatsinking constraints to maintain junction temperatures within safe operating limits during continuous operation.
Single FETs, MOSFETs Part Context
This device belongs to Alpha & Omega Semiconductor's 700V N-Channel MOSFET lineup. It shares core electrical specifications with the AOW360A70 but utilizes a distinct surface-mount package configuration. The product line targets industrial and consumer power electronics requiring reliable high-voltage performance.
Single FETs, MOSFETs Replacement Considerations
Direct substitutes must match the 700V/800V rating, TO-262F package, and similar RDS(ON) and Qg values. Verify pinout compatibility and thermal resistance specifications before integration into existing designs.
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