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AOWF450A70 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is N. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for AOWF450A70
- Description：N
- Series：aMOS5™
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：700 V
- Current - Continuous Drain (Id) @ 25°C：11A (Tj)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：450mOhm @ 2.3A, 10V
- Vgs(th) (Max) @ Id：3.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：20 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1115 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：26W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-262F
- Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA
Single FETs, MOSFETs datasheet and documents for AOWF450A70
Single FETs, MOSFETs Overview
The AOWF450A70 is a 700V N-Channel Power Transistor utilizing proprietary aMOS5 technology. It features a maximum drain-source voltage of 700V and an on-resistance of 0.45Ω at VGS=10V. The device supports a pulsed drain current of 44A and operates within a junction temperature range of -55°C to 150°C. Packaged in TO-262F, it offers optimized switching parameters for EMI performance and enhanced body diode robustness.
Single FETs, MOSFETs Feature Summary
- Proprietary aMOS5 technology ensures low on-resistance and optimized switching characteristics.
- Enhanced body diode design provides robustness and fast reverse recovery capabilities.
- Optimized switching parameters contribute to improved electromagnetic interference performance.
Single FETs, MOSFETs Applications
- High-voltage power conversion systems
- Industrial motor control applications
- Uninterruptible power supply units
Single FETs, MOSFETs Procurement Notes
Verify the specific package type and electrical ratings against the official Alpha & Omega Semiconductor datasheet before integration. Confirm that the intended operating conditions remain within the absolute maximum ratings defined in the product documentation. Ensure compliance with all applicable export control regulations and legal requirements during acquisition.
Single FETs, MOSFETs Selection Notes
Select this component when high-voltage isolation and efficient switching are required. The TO-262F package facilitates effective thermal management for continuous operation. Evaluate the gate charge and capacitance values to ensure compatibility with the driving circuitry for optimal switching speed and efficiency.
Single FETs, MOSFETs Part Context
This part belongs to the aMOS5 series from Alpha & Omega Semiconductor, designed for high-performance power switching. The TO-262F package provides a balance between power handling capability and surface-mount convenience. It serves as a critical discrete semiconductor solution for demanding electronic environments.
Single FETs, MOSFETs Replacement Considerations
Consult official manufacturer substitution lists for verified alternatives. Cross-referencing requires matching voltage ratings, current capabilities, and package dimensions to ensure functional equivalence without compromising system reliability.
Single FETs, MOSFETs FAQ
What is the maximum repetitive avalanche energy rating?
The single pulsed avalanche energy rating is 30mJ, tested under specific conditions including L=60mH, IAS=1A, VDD=150V, and RG=25Ω.
How does the device handle body diode reverse recovery?
The device features an enhanced body diode with a reverse recovery time of 275ns and a peak reverse recovery current of 21A under specified test conditions.
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