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AOWF7S65 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 650V 7A TO262F. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for AOWF7S65
- Description：MOSFET N-CH 650V 7A TO262F
- Series：aMOS™
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：650mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：9.2 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：434 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：25W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-262F
- Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA
Single FETs, MOSFETs datasheet and documents for AOWF7S65
Single FETs, MOSFETs Overview
The AOWF7S65 is a 650V N-channel power MOSFET from Alpha & Omega Semiconductor, packaged in TO-262. It features a maximum drain-source voltage of 650V and a continuous drain current of 1.7A at 25°C case temperature. The device has a typical gate charge of 9.2nC and a maximum on-resistance of 0.65Ω at VGS=10V. It operates within a junction temperature range of -55°C to 150°C.
Single FETs, MOSFETs Feature Summary
- Fabricated using advanced αMOSTM high voltage process for robust switching performance.
- Guaranteed avalanche capability with 100% UIS testing.
- Low total gate charge and output capacitance energy (Eoss) for efficient operation.
- Optimized for quick adoption into offline power supply designs.
Single FETs, MOSFETs Applications
- Offline power supply designs
- Switching applications requiring high voltage ruggedness
Single FETs, MOSFETs Procurement Notes
Verify the specific package type matches the design requirements, as the AOWF7S65 uses the TO-262 footprint. Confirm that the component meets consumer market qualification standards, as it is not authorized for life support devices or critical systems. Ensure thermal management aligns with the specified junction-to-case resistance values provided in the datasheet.
Single FETs, MOSFETs Selection Notes
Select this component when a 650V rating is required alongside low gate charge for reduced switching losses. Consider the TO-262 package for through-hole mounting needs. Evaluate the 1.7A continuous current limit against peak load requirements, noting the pulsed drain current capability of 30A for transient conditions.
Single FETs, MOSFETs Part Context
This part belongs to the AOW7S65 series, utilizing Alpha & Omega Semiconductor's αMOSTM technology. It is designed to deliver high performance in high-voltage environments. The 'F' suffix typically denotes the specific TO-262 package variant within this product line.
Single FETs, MOSFETs Replacement Considerations
Public confirmed substitute part numbers are not available in the source material.
Single FETs, MOSFETs FAQ
What is the maximum repetitive avalanche energy for the AOWF7S65?
The maximum repetitive avalanche energy is 86 mJ.
Is the AOWF7S65 suitable for critical life support systems?
No, the product is designed and qualified for the consumer market only. Applications as critical components in life support devices are not authorized.
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