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The AOZ5312UQI is a high-current DrMOS power module integrating two asymmetrical MOSFETs and an internal driver. It supports a 2.5V to 20V input range with a 4.5V to 5.5V driver supply. The device delivers 60A continuous output, peaking at 80A for 10ms pulses and 120A for 10µs pulses. Operating frequencies reach up to 2MHz. It features 3V/5V PWM compatibility, Tri-State support, and UVLO protection.
Verify the specific suffix UQI corresponds to the -40°C to +150°C junction temperature range and RoHS compliance. Confirm package type is QFN5x5-31L. Ensure ordering documentation matches the manufacturer's part number exactly to avoid functional discrepancies.
Select this component for synchronous buck applications requiring high current density in a compact footprint. The integrated driver simplifies design by reducing external component count. Verify that the PCB layout accommodates the exposed pads for adequate thermal dissipation under peak load conditions.
This module belongs to the Alpha & Omega Semiconductor DrMOS family. It combines high-side and low-side MOSFETs with gate drivers. The UQI variant specifies the extended temperature range compared to other series members. It is designed for efficient power conversion in space-constrained electronics.
AOZ5312NQI is a verified substitute with identical electrical specifications but a reduced operating temperature range of -40°C to +125°C. Verify thermal requirements before substitution.
Diode Emulation Mode is enabled by pulling the SMOD# pin low. This allows the Low-Side MOSFET to operate asynchronously during light loads or startup.
The THWN pin is an open-drain output that indicates a thermal warning. It pulls low when the junction temperature exceeds 150°C and resets when the temperature drops below 120°C.
Yes, the device supports Tri-State PWM inputs. When the PWM signal enters the Tri-State window, both MOSFETs turn off, placing the switching node in a high-impedance state.