APL602B2G

Single FETs, MOSFETs Overview

The APL602B2G is a single N-channel Power MOSFET manufactured by Microchip Technology. It utilizes T-MAX™ [B2] packaging, a variant of the TO-247-3 through-hole format. The device features a maximum drain-source voltage (Vdss) of 600 V and supports a continuous drain current (Id) of 49 A at case temperature. Key electrical parameters include a maximum on-state resistance (Rds(on)) of 125 mΩ at 12 V gate drive and 29 A current, with an input capacitance (Ciss) of 9000 pF at 25 V. The component operates within a junction temperature range of -55°C to +150°C and has a maximum power dissipation of 730 W at case temperature.

Single FETs, MOSFETs Feature Summary

• High-voltage capability with 600 V breakdown rating for robust switching applications
• T-MAX™ [B2] package design optimized for high thermal performance and reliability
• Low on-state resistance characteristics to minimize conduction losses in power circuits

Single FETs, MOSFETs Applications

• Industrial motor drives and control systems
• High-frequency switching power supplies
• Inverter circuits for renewable energy systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix B2G to confirm the T-MAX™ [B2] package configuration and lead time requirements. Ensure compatibility with existing PCB footprints for TO-247-3 variants during procurement planning. Confirm RoHS compliance status and check for any recent Product Change Notifications that may affect assembly or material specifications before finalizing orders.

Single FETs, MOSFETs Selection Notes

Select this component when a 600 V N-channel MOSFET with moderate current handling is required. The 125 mΩ Rds(on) offers a balance between conduction loss and cost for medium-power applications. Consider the 49 A continuous current rating against thermal management capabilities in the target enclosure. The through-hole mounting style suits prototyping or high-reliability industrial designs requiring mechanical stability.

Single FETs, MOSFETs Part Context

This part belongs to Microchip's high-voltage discrete semiconductor portfolio, specifically the APL series designed for power switching. The T-MAX™ branding indicates a specialized package technology aimed at improving thermal conductivity and ruggedness compared to standard TO-247 packages. It serves as a replacement for legacy high-voltage MOSFETs in industrial and consumer power electronics.

Single FETs, MOSFETs Replacement Considerations

Check datasheets for direct pin-compatible alternatives with similar Vdss and Rds(on) values. Verify that substitute components meet the same thermal resistance and package dimensions to ensure seamless integration without redesigning the heatsink or PCB layout.