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APT10025JVFR is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 1000V 34A ISOTOP. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for APT10025JVFR
- Description：MOSFET N-CH 1000V 34A ISOTOP
- Series：POWER MOS V®
- Mfr：Microchip Technology
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：1000 V
- Current - Continuous Drain (Id) @ 25°C：34A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：250mOhm @ 500mA, 10V
- Vgs(th) (Max) @ Id：4V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs：990 nC @ 10 V
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：18000 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：Chassis Mount
- Supplier Device Package：ISOTOP®
- Package / Case：SOT-227-4, miniBLOC
Single FETs, MOSFETs datasheet and documents for APT10025JVFR
Single FETs, MOSFETs Overview
The APT10025JVFR is a single N-channel Power MOSFET module manufactured by Microchip Technology. It utilizes FREDFET technology and is housed in an SOT-227 package with screw mount installation. The device features a drain-source breakdown voltage of 1000 V and a maximum continuous drain current of 25 A. Its on-resistance is specified at 250 mOhms, with a power dissipation rating of 300 W. The component operates within a temperature range of -55°C to +150°C junction temperature.
Single FETs, MOSFETs Feature Summary
- Incorporates FREDFET technology for optimized switching performance
- Designed for high-voltage applications with 1000 V blocking capability
- Utilizes SOT-227 package for robust thermal management and screw mounting
Single FETs, MOSFETs Applications
- High-voltage DC-DC converters
- Induction heating systems
- Motor control circuits
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix JVFR against official Microchip documentation to confirm pinout and electrical tolerances. Ensure compatibility with existing thermal interface materials for the SOT-227 package. Confirm that the 250 mOhm resistance meets system efficiency requirements under expected load conditions. Check for any recent product change notifications affecting this part number.
Single FETs, MOSFETs Selection Notes
Select this component when a 1000 V rating is required for high-voltage isolation. The 250 mOhm on-resistance offers a balance between conduction losses and cost for moderate current levels around 25 A. The SOT-227 package facilitates easy integration into chassis-mounted designs requiring screw termination rather than surface mount techniques.
Single FETs, MOSFETs Part Context
This module belongs to the APT series of discrete power semiconductors from Microchip Technology. It represents a legacy silicon-based solution distinct from newer wide-bandgap alternatives like Silicon Carbide (SiC). The APT series is engineered for industrial power conversion where reliability and high voltage handling are prioritized over ultra-high frequency operation.
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