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APT10026JFLL is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 1000V 30A ISOTOP. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for APT10026JFLL
- Description：MOSFET N-CH 1000V 30A ISOTOP
- Series：POWER MOS 7®
- Mfr：Microchip Technology
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：1000 V
- Current - Continuous Drain (Id) @ 25°C：30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：260mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id：5V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs：267 nC @ 10 V
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：7114 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：Chassis Mount
- Supplier Device Package：ISOTOP®
- Package / Case：SOT-227-4, miniBLOC
Single FETs, MOSFETs datasheet and documents for APT10026JFLL
Single FETs, MOSFETs Overview
The APT10026JFLL is an N-Channel FREDFET MOS 7 power module manufactured by Microchip Technology. It features a Drain-Source Voltage (Vdss) of 1000 V and a maximum On-State Resistance (Rds(on)) of 280 milliohms. The device supports a Continuous Drain Current (Id) of 30 A at case temperature and a Pulsed Drain Current of 120 A. Gate-Source Voltage is rated at ±30 V, with a total power dissipation capacity of 595 W.
Single FETs, MOSFETs Feature Summary
- Utilizes POWER MOS 7 technology for enhanced switching performance
- Designed as an N-Channel enhancement mode device
- Constructed in a chassis-mount ISOTOP package configuration
Single FETs, MOSFETs Applications
- High-voltage industrial motor drives
- Switch-mode power supply output stages
- DC-DC converter topologies requiring high isolation
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix 'JFLL' against official Microchip documentation to confirm pinout and thermal interface specifications. Ensure that the procurement channel provides genuine components with traceable manufacturing dates. Cross-reference the datasheet revision date to validate electrical parameter tolerances before integration into design schematics.
Single FETs, MOSFETs Selection Notes
Select this component when a 1000 V breakdown voltage and low on-resistance are required for high-power applications. The ISOTOP package facilitates direct chassis mounting for efficient heat dissipation. Evaluate the 30 A continuous current rating against thermal management capabilities to ensure operation within the 595 W power dissipation limit under expected load conditions.
Single FETs, MOSFETs Part Context
This part belongs to the Microchip Technology FREDFET series, which integrates Fast Recovery Epitaxial Diode characteristics with MOSFET switching capabilities. The POWER MOS 7 generation represents an evolution in silicon carbide or advanced silicon processing techniques aimed at reducing switching losses and improving ruggedness in high-voltage power conversion environments.
Single FETs, MOSFETs Replacement Considerations
Consult official Microchip substitution guides for compatible alternatives. Verify that any substitute maintains identical voltage ratings, current handling, and package dimensions to ensure mechanical and electrical compatibility without redesigning the heatsink or PCB layout.
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