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APT10035LLLG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 1000V 28A TO264. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for APT10035LLLG
- Description：MOSFET N-CH 1000V 28A TO264
- Series：POWER MOS 7®
- Mfr：Microchip Technology
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：1000 V
- Current - Continuous Drain (Id) @ 25°C：28A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：350mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id：5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs：186 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：5185 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：690W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-264 [L]
- Package / Case：TO-264-3, TO-264AA
Single FETs, MOSFETs datasheet and documents for APT10035LLLG
Single FETs, MOSFETs Overview
The APT10035LLLG is a single N-channel power MOSFET from the POWER MOS 7 series, manufactured by Microchip Technology. It features a drain-source voltage (Vdss) of 1000 V and a continuous drain current (Id) of 28 A at case temperature (Tc). The device has a maximum on-state resistance (Rds(on)) of 350 mΩ at 14 A and 10 V gate-source voltage. Power dissipation is rated at 690 W (Tc). It utilizes a TO-264 (L) through-hole package.
Single FETs, MOSFETs Feature Summary
- High-voltage capability with 1000 V drain-source breakdown
- Enhanced low-loss conduction via POWER MOS 7 technology
- Robust thermal performance supporting high power dissipation
Single FETs, MOSFETs Applications
- Industrial motor drives
- High-voltage DC-DC converters
- Uninterruptible power supplies (UPS)
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix LLLG to confirm the TO-264 (L) package variant. Ensure compatibility with existing board layouts for this through-hole footprint. Confirm that the 1000 V rating meets system insulation requirements. Check datasheet for derating curves applicable to your operating temperature range.
Single FETs, MOSFETs Selection Notes
Select this component when a 1000 V rating is required alongside moderate current handling in a through-hole configuration. Compare Rds(on) values against alternative packages if space constraints allow surface-mount options. Consider thermal management solutions suitable for the TO-264 lead frame design.
Single FETs, MOSFETs Part Context
This part belongs to Microchip's POWER MOS 7 family, known for optimized trade-offs between switching speed and conduction loss. It serves as a discrete solution for medium-power applications where robustness and high voltage blocking are critical. The TO-264 package offers mechanical stability for industrial environments.
Single FETs, MOSFETs Replacement Considerations
Direct substitutes may include other 1000 V N-channel MOSFETs in TO-264 packages with similar Rds(on) and Id ratings. Verify pinout compatibility before substitution. Cross-reference with Microchip's own portfolio for updated generations or improved thermal variants.
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