ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
APT10045B2FLLG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 1000V 23A T-MAX. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for APT10045B2FLLG
- Description：MOSFET N-CH 1000V 23A T-MAX
- Series：POWER MOS 7®
- Mfr：Microchip Technology
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：1000 V
- Current - Continuous Drain (Id) @ 25°C：23A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：460mOhm @ 11.5A, 10V
- Vgs(th) (Max) @ Id：5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs：154 nC @ 10 V
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：4350 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：T-MAX™ [B2]
- Package / Case：TO-247-3 Variant
Single FETs, MOSFETs datasheet and documents for APT10045B2FLLG
Single FETs, MOSFETs Overview
The APT10045B2FLLG is a single N-channel Power MOS 7® FREDFET manufactured by Microchip Technology. It utilizes silicon technology and is housed in a T-MAX™ [B2] (TO-247 MAX) through-hole package. The device features a drain-source breakdown voltage of 1000 V and a continuous drain current of 67 A at case temperature. Its maximum on-resistance is 45 mΩ, with a gate threshold voltage of 5 V. Key electrical characteristics include a gate charge of 141 nC and a power dissipation rating of 694 W at case temperature. It operates within a junction temperature range of -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- High-voltage capability with 1000 V drain-source breakdown voltage for robust performance in demanding environments.
- Low conduction losses achieved through optimized Power MOS 7® technology and low on-resistance.
- Fast switching characteristics designed to minimize switching energy and improve overall system efficiency.
- Reduced gate drive power requirements due to low gate charge specifications.
Single FETs, MOSFETs Applications
- High-efficiency industrial motor drives
- Isolated DC-DC converter topologies
- Uninterruptible power supply (UPS) systems
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix 'LLG' against the official Microchip datasheet to confirm the exact pinout and thermal pad configuration. Ensure the ordering part number matches the required voltage and current ratings for your circuit design. Confirm RoHS compliance status directly from the manufacturer's documentation before finalizing procurement.
Single FETs, MOSFETs Selection Notes
Select this component when high voltage isolation and low conduction loss are critical. The TO-247 MAX package offers superior thermal performance compared to standard TO-247 variants. Consider the 1000 V rating for safety margins in high-voltage bus applications. Evaluate the gate charge requirements against your available gate driver capabilities to ensure optimal switching speeds.
Single FETs, MOSFETs Part Context
This device belongs to the Microchip Power MOS 7® family, which integrates advanced trench gate technology with fast recovery diode characteristics. The T-MAX™ series provides enhanced thermal conductivity and mechanical reliability. It serves as a discrete solution for power conversion stages requiring high voltage blocking and efficient current handling.
Single FETs, MOSFETs Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Consult Microchip Technology for direct replacements or cross-reference based on identical electrical parameters such as 1000 V, 67 A, and 45 mΩ specifications.
Single FETs, MOSFETs FAQ
What is the maximum repetitive peak drain current?
The maximum repetitive peak drain current is limited by the maximum junction temperature and pulse width constraints as defined in the device's absolute maximum ratings.
Does this component include an integrated body diode?
Yes, as a FREDFET (Fast Recovery Epitaxial Diode FET), it includes an integrated fast recovery body diode suitable for synchronous rectification or freewheeling applications.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
