APT10086BVRG

Single FETs, MOSFETs Overview

The APT10086BVRG is a single N-channel Power MOSFET manufactured by Microchip Technology, housed in a TO-247-3 through-hole package. It utilizes silicon technology and operates within an ambient temperature range of -55°C to +150°C. Key electrical specifications include a drain-source breakdown voltage (Vds) of 1 kV and a continuous drain current (Id) of 13 A. The device features a maximum on-resistance (Rds(on)) of 860 mΩ at Vgs = 10 V. Gate characteristics specify a threshold voltage (Vgs(th)) of 2 V, a gate charge (Qg) of 275 nC, and a maximum gate-source voltage (Vgs) of ±30 V. Thermal performance includes a power dissipation rating of 370 W.

Single FETs, MOSFETs Feature Summary

• High-voltage capability with a 1 kV drain-source breakdown voltage for robust operation in demanding environments.
• Enhancement-mode N-channel construction providing reliable switching functionality.
• Through-hole mounting design compatible with standard PCB layouts requiring high thermal management.

Single FETs, MOSFETs Applications

• High-voltage industrial motor control systems
• Power supply circuits requiring 1 kV isolation
• Inverter and converter topologies

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'VRG' against official Microchip documentation to confirm RoHS compliance status and lead time requirements. Ensure the ordering part number matches the exact pinout and thermal characteristics defined in the datasheet. Confirm that the TO-247-3 package dimensions align with your mechanical constraints before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when a 1 kV rating is mandatory and moderate current handling around 13 A is sufficient. Compare the 860 mΩ on-resistance against alternative devices if lower conduction losses are required. Consider the TO-247-3 package for applications prioritizing thermal dissipation over surface-mount density. Evaluate the 275 nC gate charge against driver capabilities to ensure efficient switching speeds.

Single FETs, MOSFETs Part Context

This device belongs to the Microchip Power MOS V series, designed for general-purpose high-voltage switching applications. The TO-247-3 package provides a standardized form factor for through-hole assembly, facilitating integration into existing designs that require robust thermal performance and high voltage isolation capabilities.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution guides for equivalent 1 kV N-channel MOSFETs in TO-247 packages. Verify compatibility regarding Rds(on), Qg, and thermal resistance values before replacing the original component.