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The APT100GLQ65JU3 is a single IGBT module manufactured by Microchip Technology under the ISOTOP trademark. It utilizes silicon technology and features an SOT-227-4 package with screw mount installation style. The device supports a collector-emitter maximum voltage (VCEO) of 650 V and delivers a continuous collector current of 165 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.85 V, a gate-emitter leakage current of 150 nA, and a power dissipation rating of 430 W. The gate-emitter maximum voltage is specified at 20 V. The component operates within a temperature range from -55°C to +150°C and weighs approximately 30 g.
Verify the specific ordering suffix and revision level against the manufacturer's latest datasheet before procurement. Confirm that the SOT-227-4 package dimensions align with the intended PCB or heatsink layout. Ensure the gate drive circuitry accommodates the 20 V maximum gate-emitter voltage limit. Check for any recent product change notifications that may affect pinout or material composition.
Select this component when a single-switch topology requires 650 V blocking capability and up to 165 A continuous current. The 1.85 V saturation voltage offers a balance between conduction loss and cost compared to lower-voltage-drop alternatives. Consider the 430 W power dissipation rating relative to the available thermal resistance of the cooling system. The wide operating temperature range supports demanding environmental conditions without derating.