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Product Detailed Parameters
- Description：IGBT TRENCH FS 600V 229A TO264
- Series：-
- Mfr：Microchip Technology
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：229 A
- Current - Collector Pulsed (Icm)：300 A
- Vce(on) (Max) @ Vge, Ic：1.85V @ 15V, 100A
- Power - Max：625 W
- Switching Energy：4.75mJ (on), 2.675mJ (off)
- Input Type：Standard
- Gate Charge：600 nC
- Td (on/off) @ 25°C：31ns/310ns
- Test Condition：400V, 100A, 1Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-264-3, TO-264AA
- Supplier Device Package：TO-264 [L]
- Grade：-
- Qualification：-
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Overview
The APT100GN60LDQ4G is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by Microchip Technology. It utilizes Fieldstop technology and is designed for low-frequency applications. The device features a maximum collector-emitter voltage of 600 V and a continuous collector current of 229 A at 25°C. It has a collector-emitter saturation voltage of 1.45 V and a power dissipation rating of 625 W. The component is housed in a TO-264-3 package with screw mount installation style. Operating temperatures range from -55°C to +175°C.
Feature Summary
- Fieldstop technology for optimized switching performance
- Single IGBT configuration for high-power control
- Designed for low-frequency application scenarios
Applications
- Industrial motor drives
- Power supply systems
- Welding equipment
Procurement Notes
Verify the specific suffix 'G' indicates RoHS compliance status as per official documentation. Confirm the TO-264-3 package dimensions match the target PCB footprint or heatsink interface requirements. Ensure the gate-emitter voltage limits are respected within the system design parameters to prevent device damage during operation.
Selection Notes
Select this component when a 600 V rated single IGBT with high current capacity is required. The Fieldstop architecture offers advantages in switching losses compared to older technologies. Consider the thermal management capabilities provided by the TO-264 package for the intended power dissipation levels in the specific application environment.
Part Context
This part belongs to the APT series of power discrete devices from Microchip Technology, formerly known as Advanced Power Technology. The series focuses on high-voltage and high-current solutions using silicon technology. The APT100GN60LDQ4G represents a specific variant optimized for robust performance in demanding industrial power electronics environments.
Replacement Considerations
Check datasheets for direct pin-compatible alternatives within the same voltage and current ratings. Verify that any substitute maintains the Fieldstop technology characteristics if switching speed is critical. Ensure the replacement package matches the TO-264-3 form factor for mechanical integration.
