Single FETs, MOSFETs APT100MC120JCU2 product image

APT100MC120JCU2

  • Description:SICFET N-CH 1200V 143A SOT227
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk

SKU:a1abe77c0c04 Category: Brand:

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APT100MC120JCU2 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is SICFET N-CH 1200V 143A SOT227. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APT100MC120JCU2

  • Description:SICFET N-CH 1200V 143A SOT227
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • FET Type:N-Channel
  • Technology:SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss):1200 V
  • Current - Continuous Drain (Id) @ 25°C:143A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):20V
  • Rds On (Max) @ Id, Vgs:17mOhm @ 100A, 20V
  • Vgs(th) (Max) @ Id:2.3V @ 2mA
  • Gate Charge (Qg) (Max) @ Vgs:360 nC @ 20 V
  • Vgs (Max):+25V, -10V
  • Input Capacitance (Ciss) (Max) @ Vds:5960 pF @ 1000 V
  • FET Feature:-
  • Power Dissipation (Max):600W (Tc)
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Supplier Device Package:SOT-227
  • Package / Case:SOT-227-4, miniBLOC

Single FETs, MOSFETs datasheet and documents for APT100MC120JCU2

APT100MC120JCU2

Single FETs, MOSFETs Overview

The APT100MC120JCU2 is a silicon carbide (SiC) power module manufactured by Microchip Technology. It features a single IGBT configuration with a collector-emitter maximum voltage of 1.2 kV and a continuous collector current of 153 A at 25°C. The device utilizes an ISOTOP-4 package for surface mount installation, offering a power dissipation capacity of 446 W. Operating within a temperature range from -55°C to +150°C, it incorporates fieldstop technology for low-frequency applications.

Single FETs, MOSFETs Feature Summary

  • Utilizes silicon carbide (SiC) technology for superior thermal conductivity and high breakdown field strength compared to silicon.
  • Features fieldstop architecture designed for low-frequency operation with optimized switching characteristics.
  • Incorporates aluminum nitride substrate to enhance thermal transfer efficiency to the heatsink system.

Single FETs, MOSFETs Applications

  • High-performance industrial power supplies
  • Motor drive systems
  • Uninterruptible power supply (UPS) units
  • Solar inverters

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'JCU2' against official Microchip documentation to confirm exact pinout and electrical tolerances. Ensure compatibility with existing PCB footprints and thermal management solutions before integration. Confirm RoHS compliance status through current datasheets as specifications may evolve.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high voltage handling and efficient heat dissipation in compact form factors. The SiC material enables higher operating frequencies and temperatures than traditional silicon modules. Evaluate thermal resistance requirements carefully to maintain junction temperatures within the specified operational limits during peak load conditions.

Single FETs, MOSFETs Part Context

This module belongs to Microchip's industrial temperature SiC power module series, expanding their portfolio of high-reliability semiconductor devices. It represents a transition toward advanced materials that support increased power density and system efficiency in demanding industrial environments.

Single FETs, MOSFETs Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Verify direct replacements only through official Microchip engineering change notices or authorized distributor cross-reference lists.

APT100MC120JCU2APT100MC120JCU2

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