APT10M11B2VFRG

$9.73

Description：MOSFET N-CH 100V 100A T-MAX
Series：POWER MOS V®
Mfr：Microsemi Corporation
Package：Tube

SKU:a08fe8374c73 Category: Single FETs, MOSFETs Brand: Microsemi Corporation

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Product introduction

APT10M11B2VFRG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microsemi Corporation. Its product description is MOSFET N-CH 100V 100A T-MAX. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APT10M11B2VFRG

Description：MOSFET N-CH 100V 100A T-MAX
Series：POWER MOS V®
Mfr：Microsemi Corporation
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：11mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id：4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs：450 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：10300 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：520W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：T-MAX™
Package / Case：TO-247-3 Variant

Single FETs, MOSFETs datasheet and documents for APT10M11B2VFRG

APT10M11B2VFRG

Single FETs, MOSFETs Overview

The APT10M11B2VFRG is a Power MOS V N-Channel enhancement mode power MOSFET manufactured by Advanced Power Technology. It utilizes T-MAX technology to minimize the JFET effect and reduce on-resistance. The device features a TO-264 (T-MAX) package with a drain-source breakdown voltage of 100V and a continuous drain current of 100A at 25°C case temperature. Key electrical characteristics include a maximum on-state resistance of 0.011 ohms, a total power dissipation of 400W, and an operating junction temperature range from -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

Power MOS V technology minimizes the JFET effect and reduces on-resistance for improved efficiency.
Optimized gate layout enables faster switching speeds compared to standard devices.
Features a fast recovery body diode suitable for high-frequency applications.
Includes 100% avalanche testing to ensure robustness under transient conditions.

Single FETs, MOSFETs Applications

High-efficiency DC-DC converters
Motor control circuits
Power factor correction stages
Isolated power supply designs

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer designation as Advanced Power Technology rather than Microsemi Corporation, as the provided datasheet originates from Advanced Power Technology. Confirm the specific ordering suffix B2VFR corresponds to the TO-264 T-MAX package variant. Ensure compliance with electrostatic discharge handling procedures during procurement and storage due to device sensitivity.

Single FETs, MOSFETs Selection Notes

Select this component when a 100V N-Channel MOSFET with low on-resistance and high current capability is required. The TO-264 package provides efficient thermal management for high-power applications. Consider the fast recovery body diode if synchronous rectification or inductive load switching is involved. Verify that the 100A continuous current rating aligns with the thermal design constraints of the target application.

Single FETs, MOSFETs Part Context

This part belongs to the Power MOS V series of high-voltage N-Channel enhancement mode power MOSFETs. The series emphasizes reduced on-resistance through minimized JFET effects and optimized packaging. The T-MAX technology represents a generation focused on higher packing density and faster switching performance within the same footprint constraints.

Single FETs, MOSFETs Replacement Considerations

The datasheet indicates identical specifications are available in the LVFR package variant. Cross-reference pinout compatibility and thermal impedance values when substituting with other 100V, 100A TO-264 packages from different manufacturers.