APT10M11JVRU3

$23.41

Description：MOSFET N-CH 100V 142A SOT227
Series：-
Mfr：Microchip Technology
Package：Bulk

SKU:2ecf8bb54904 Category: Single FETs, MOSFETs Brand: Microchip Technology

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Product introduction

APT10M11JVRU3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 100V 142A SOT227. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APT10M11JVRU3

Description：MOSFET N-CH 100V 142A SOT227
Series：-
Mfr：Microchip Technology
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：142A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：11mOhm @ 71A, 10V
Vgs(th) (Max) @ Id：4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs：300 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：8600 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：450W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Chassis Mount
Supplier Device Package：SOT-227
Package / Case：SOT-227-4, miniBLOC

Single FETs, MOSFETs datasheet and documents for APT10M11JVRU3

APT10M11JVRU3

Single FETs, MOSFETs Overview

The APT10M11JVRU3 is a single-channel N-channel Power MOSFET module from the POWER MOS V® family, housed in an ISOTOP® (SOT-227) package. It features a drain-source breakdown voltage of 100V and a maximum continuous drain current of 142A at 25°C case temperature. The device exhibits a low on-resistance of 11mΩ and supports a maximum power dissipation of 450W. Key electrical parameters include a gate threshold voltage of 2V to 4V, total gate charge of 300nC, and turn-on/turn-off delay times of 16ns and 51ns respectively. The integrated chopper diode has a forward voltage of 1.1V at 30A.

Single FETs, MOSFETs Feature Summary

ISOTOP® SOT-227 isolated package enabling direct heatsink mounting with high isolation voltage
POWER MOS V® technology providing low on-resistance and fast intrinsic switching characteristics
High ruggedness with rated avalanche energy capability for repetitive and non-repetitive conditions

Single FETs, MOSFETs Applications

AC and DC motor control systems
Switched Mode Power Supplies (SMPS)
Buck chopper circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific revision level against the latest Microsemi datasheet before implementation. Confirm that the ISOTOP® package insulation requirements match the system's isolation voltage needs. Ensure thermal management design accounts for the specified junction-to-case resistance values under actual operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high current handling in a compact, thermally efficient footprint. The low stray inductance of the ISOTOP® package makes it suitable for high-frequency switching operations. Consider the 100V rating when designing for systems with potential voltage spikes or transient overloads.

Single FETs, MOSFETs Part Context

This part belongs to the Advanced Power Technology (APT) series acquired by Microchip Technology. It utilizes silicon-based MOSFET technology within the POWER MOS V® generation. The ISOTOP® packaging distinguishes it from standard discrete packages by offering superior thermal performance and simplified mechanical integration for power electronics designs.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other APT10M11 variants such as APT10M11JVR or APT10M11JVRU2 if pinout compatibility is required. Verify that any substitute maintains the same SOT-227 form factor and electrical ratings to ensure seamless integration without PCB redesign.