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APT10M19SVRG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 100V 75A D3PAK. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for APT10M19SVRG
- Description：MOSFET N-CH 100V 75A D3PAK
- Series：POWER MOS V®
- Mfr：Microchip Technology
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：19mOhm @ 500mA, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：300 nC @ 10 V
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：6120 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：D3PAK
- Package / Case：TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Single FETs, MOSFETs datasheet and documents for APT10M19SVRG
Single FETs, MOSFETs Overview
The APT10M19SVRG is a single N-channel Power MOSFET manufactured by Microchip Technology, utilizing Silicon technology and the POWER MOS 5® process. It features a Drain-Source Voltage (Vds) of 100 V and a continuous Drain Current (Id) of 75 A at case temperature. The device exhibits a maximum On-Resistance (Rds(on)) of 19 mOhms and a Gate Charge (Qg) of 300 nC. It operates within an ambient temperature range of -55°C to +150°C with a power dissipation rating of 370 W. The component is housed in a D3PAK-3 surface-mount package.
Single FETs, MOSFETs Feature Summary
- Utilizes POWER MOS 5® silicon technology for optimized performance
- Designed for high-efficiency switching applications with low on-resistance
- Robust thermal management capabilities supporting high power dissipation
Single FETs, MOSFETs Applications
- High-frequency DC-DC converters
- Motor control circuits
- Power supply output stages
Single FETs, MOSFETs Procurement Notes
Verify the specific datasheet revision and ordering suffixes directly with Microchip Technology or authorized distributors before procurement. Confirm that the D3PAK-3 package dimensions match your PCB footprint requirements. Ensure that the gate drive voltage specifications align with your system's logic levels to guarantee proper enhancement mode operation and prevent threshold voltage issues during deployment.
Single FETs, MOSFETs Selection Notes
Select this component when a surface-mount N-channel MOSFET with 100 V breakdown and 75 A current capacity is required. The 19 mOhm on-resistance makes it suitable for applications prioritizing conduction loss reduction. Consider the D3PAK-3 package for space-constrained designs requiring through-hole-like thermal performance in a surface-mount form factor. Evaluate the 300 nC gate charge against your driver capabilities for switching speed optimization.
Single FETs, MOSFETs Part Context
This part belongs to Microchip's POWER MOS 5® family of discrete semiconductors. These devices are engineered to provide improved figure-of-merit compared to previous generations, balancing low on-resistance with fast switching characteristics. The APT10M19SVRG specifically targets industrial and consumer power electronics markets where reliability and efficiency are critical design parameters.
Single FETs, MOSFETs Replacement Considerations
Check for direct pin-compatible alternatives within the same POWER MOS 5® series from Microchip. Verify that any substitute maintains the 100 V Vds and 75 A Id ratings while ensuring the Rds(on) does not exceed 19 mOhms to preserve thermal performance.
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