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APT10M25BVRG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 100V 75A TO247. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for APT10M25BVRG
- Description：MOSFET N-CH 100V 75A TO247
- Series：POWER MOS V®
- Mfr：Microchip Technology
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：25mOhm @ 500mA, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：225 nC @ 10 V
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：5160 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247 [B]
- Package / Case：TO-247-3
Single FETs, MOSFETs datasheet and documents for APT10M25BVRG
Single FETs, MOSFETs Overview
The APT10M25BVRG is a single N-channel enhancement mode Power MOSFET manufactured by Microchip Technology. It features a drain-source voltage of 100 V and a continuous drain current of 75 A. The maximum on-resistance is specified at 25 mΩ. The device utilizes the TO-247-3 package for through-hole mounting. Key electrical parameters include a gate-source voltage range of -30 V to +30 V, a threshold voltage of 2 V, and a total gate charge of 225 nC. Power dissipation reaches 300 W, with an operating temperature range from -55 °C to +150 °C.
Single FETs, MOSFETs Feature Summary
- Power MOS V technology minimizes JFET effect and reduces on-resistance
- Optimized gate layout enables faster switching speeds
- Achieves lower leakage characteristics compared to previous generations
- 100% avalanche tested for enhanced reliability
Single FETs, MOSFETs Applications
- High voltage power switching circuits
- DC-DC converter topologies
- Motor control applications
- Industrial power supplies
Single FETs, MOSFETs Procurement Notes
Verify component authenticity against official Microchip Technology documentation. Confirm RoHS compliance status as indicated in specific datasheets, noting potential variations between leaded and lead-free variants. Ensure the ordering suffix matches the required environmental specifications. Cross-reference the manufacturer part number with authorized distributor catalogs to validate current production status and technical revisions before procurement.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring robust 100 V blocking capability with high current handling up to 75 A. The low on-resistance supports efficient conduction in power conversion stages. Consider the TO-247-3 package for adequate thermal management in through-hole implementations. Evaluate the gate charge requirements against driver capabilities to ensure optimal switching performance within the specified temperature range.
Single FETs, MOSFETs Part Context
This device belongs to the Power MOS V family of high-voltage N-channel enhancement mode power MOSFETs. The series is characterized by optimized gate layouts that improve switching speed and reduced on-resistance through minimized JFET effects. Manufactured by Microchip Technology, these components are designed for demanding power electronics applications requiring reliable high-current switching.
Single FETs, MOSFETs Replacement Considerations
APT10M25BVR is the non-RoHS compliant variant of this component. APT10M19BVRG offers similar voltage and current ratings but with a lower on-resistance of 19 mΩ.
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