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APT10SCD120BCT
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Product Detailed Parameters
- Description：DIODE ARRAY SIC 1200V 36A TO-247
- Series：-
- Mfr：Microsemi Corporation
- Package：Tube
- Diode Configuration：1 Pair Common Cathode
- Technology：SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max)：1200 V
- Current - Average Rectified (Io) (per Diode)：36A (DC)
- Voltage - Forward (Vf) (Max) @ If：1.8 V @ 10 A
- Speed：No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr)：0 ns
- Current - Reverse Leakage @ Vr：200 µA @ 1200 V
- Operating Temperature - Junction：-55°C ~ 150°C
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247
- Grade：-
- Qualification：-
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Overview
The APT10SCD120BCT is a 1200V, 10A Silicon Carbide Schottky diode in a TO-247 package. It features zero reverse recovery time and low forward voltage (1.8V typ at 10A). Maximum ratings include 36A DC forward current at 25°C case temperature and 125W power dissipation. The junction-to-case thermal resistance is 1.0°C/W. Operating junction temperature ranges from -55°C to 150°C.
Feature Summary
- Zero reverse recovery time eliminates snubber requirements
- Low forward voltage reduces conduction losses
- Robust high surge current capability for transient protection
Applications
- Anti-parallel diode in switchmode power supplies
- Inverter circuits
- Power factor correction (PFC)
Procurement Notes
Verify the specific Microsemi part number against official datasheets to confirm electrical characteristics and packaging details. Ensure compatibility with your system's thermal management and voltage requirements before procurement.
Selection Notes
Select this component for applications requiring fast switching and minimal reverse recovery charge. Consider the TO-247 package for its thermal performance and mounting options. Evaluate the forward voltage drop against system efficiency targets.
Part Context
This silicon carbide Schottky diode belongs to the family of wide bandgap power semiconductors designed for high-efficiency power conversion. It offers superior performance compared to traditional silicon diodes in high-voltage and high-temperature environments.
Replacement Considerations
Check for direct replacements with identical voltage, current, and package specifications. Verify that any substitute maintains the zero-recovery characteristic and thermal resistance requirements of the original design.
FAQ
What is the maximum repetitive peak reverse voltage?
The maximum repetitive peak reverse voltage (VRRM) is 1200 Volts.
Does this diode exhibit reverse recovery charge?
No, it is a zero-recovery device with negligible reverse recovery time.
What is the typical forward voltage at 10A?
The typical forward voltage is 1.8 Volts at an ambient temperature of 25°C.
