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APT10SCE65B
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Product Detailed Parameters
- Description：DIODE SCHOTTKY 650V 10A TO247
- Series：*
- Mfr：Microsemi Corporation
- Package：Tube
- Technology：-
- Voltage - DC Reverse (Vr) (Max)：-
- Current - Average Rectified (Io)：-
- Voltage - Forward (Vf) (Max) @ If：-
- Speed：-
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：-
- Capacitance @ Vr, F：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Operating Temperature - Junction：-
- Grade：-
- Qualification：-
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Overview
The APT10SCE65B is a silicon carbide Schottky diode manufactured by Microsemi Corporation, rated for a repetitive reverse voltage of 650V and a continuous forward current of 10A. It utilizes a TO-247 through-hole package and operates within a junction temperature range of -55°C to +150°C. The device exhibits a maximum forward voltage of 1.8V at 10A and supports a surge current of 110A. This component is part of the broader 650V SiC Schottky portfolio, designed for high-efficiency power conversion applications requiring low switching losses.
Feature Summary
- Utilizes silicon carbide (SiC) technology for superior thermal performance and high-temperature operation compared to traditional silicon devices.
- Features a Schottky rectifier structure that eliminates reverse recovery charge, enabling faster switching speeds and reduced electromagnetic interference.
- Designed with a robust TO-247 through-hole package to facilitate efficient heat dissipation in high-power density systems.
Applications
- High-frequency DC-DC converters
- Uninterruptible Power Supplies (UPS)
- Industrial motor drives
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status as indicated in official documentation. Check for product discontinuance notifications, as this specific part number may be subject to end-of-life status. Ensure packaging integrity matches the specified TO-247 form factor upon receipt.
Selection Notes
Select this component for designs requiring high-temperature stability and low reverse leakage current. Evaluate thermal management requirements given the 10A continuous current rating. Consider the TO-247 footprint constraints during PCB layout. Compare total system efficiency gains against potential cost implications relative to alternative SiC or silicon solutions.
Part Context
This diode belongs to Microsemi's 650V silicon carbide Schottky product line, which includes models such as APT10SCD65K and APT20SCD65K. These components are engineered for next-generation power electronics, offering improved reliability and efficiency over conventional silicon-based rectifiers in demanding industrial and automotive environments.
Replacement Considerations
Officially documented substitutes include MSC010SDA070B for equivalent specifications. Verify pinout compatibility and thermal characteristics before implementation. Cross-reference datasheets to ensure voltage and current ratings meet application requirements.
