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APT11F80B is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 800V 12A TO247. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for APT11F80B
- Description：MOSFET N-CH 800V 12A TO247
- Series：POWER MOS 8™
- Mfr：Microchip Technology
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：800 V
- Current - Continuous Drain (Id) @ 25°C：12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：900mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：80 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：2471 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：337W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247 [B]
- Package / Case：TO-247-3
Single FETs, MOSFETs datasheet and documents for APT11F80B
Single FETs, MOSFETs Overview
The APT11F80B is a through-hole N-channel Power MOS 8™ MOSFET from Microchip Technology, housed in a TO-247 package. It features an 800V drain-source breakdown voltage and a maximum continuous drain current of 12A at case temperature. The device exhibits a typical on-resistance of 0.90 ohms at 25°C and is rated for high-frequency switching applications.
Single FETs, MOSFETs Feature Summary
- Inherently quiet switching with optimized input and reverse transfer capacitance ratios to minimize electromagnetic interference.
- Fast switching performance combined with low gate charge characteristics for efficient operation.
- Rated for avalanche energy handling to withstand transient electrical stress.
Single FETs, MOSFETs Applications
- Power factor correction circuits
- Server and telecom power systems
- Solar inverters
- Semiconductor capital equipment
Single FETs, MOSFETs Procurement Notes
Verify the specific datasheet revision and ordering suffixes directly with Microchip Technology or authorized distributors. Confirm that the TO-247 package variant matches your board layout requirements. Ensure compliance with RoHS directives if applicable to your manufacturing standards before finalizing procurement.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring robust high-voltage switching with reduced EMI. The Power MOS 8 architecture offers improved efficiency over previous generations. Evaluate thermal management needs based on the 0.90 ohm on-resistance and the 12A current rating under your specific operating conditions.
Single FETs, MOSFETs Part Context
This part belongs to the Power MOS 8 family, which includes both standard MOSFETs and FREDFETs. The APT11F80B represents the standard MOSFET version within the 800V class, designed for hard and soft switching applications above 500W where low EMI is critical.
Single FETs, MOSFETs Replacement Considerations
Consult the official Microchip Power MOS 8 selection guide for direct equivalents. Verify pinout compatibility and electrical parameters against alternative suppliers' devices before substitution.
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