APT1201R2BFLLG

$22.87

Description：MOSFET N-CH 1200V 12A TO247
Series：POWER MOS 7®
Mfr：Microchip Technology
Package：Tube

SKU:b097fcef6305 Category: Single FETs, MOSFETs Brand: Microchip Technology

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

APT1201R2BFLLG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 1200V 12A TO247. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APT1201R2BFLLG

Description：MOSFET N-CH 1200V 12A TO247
Series：POWER MOS 7®
Mfr：Microchip Technology
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：1.25Ohm @ 6A, 10V
Vgs(th) (Max) @ Id：5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：100 nC @ 10 V
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：2540 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247 [B]
Package / Case：TO-247-3

Single FETs, MOSFETs datasheet and documents for APT1201R2BFLLG

APT1201R2BFLLG

Single FETs, MOSFETs Overview

The APT1201R2BFLLG is a single N-Channel FREDFET MOS7 power transistor manufactured by Microchip Technology. It features a drain-source breakdown voltage of 1200 V and supports a continuous drain current of 12 A at case temperature. The device exhibits a maximum on-state resistance of 1.25 Ohms and handles up to 403 W of power dissipation. Packaged in a TO-247 [B] through-hole configuration, it operates as an enhancement mode device designed for high-voltage switching applications.

Single FETs, MOSFETs Feature Summary

Utilizes Microchip's proprietary FREDFET MOS7 technology for optimized fast recovery performance.
Engineered with an N-channel enhancement mode structure for efficient high-voltage switching.
Designed for robust thermal management within the TO-247 [B] through-hole package.

Single FETs, MOSFETs Applications

High-frequency resonant converter circuits
Uninterruptible power supply (UPS) systems
Induction heating power stages

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'L' against the official Microchip datasheet to confirm lead-free compliance status. Ensure the TO-247 [B] pinout matches the target PCB footprint design. Confirm that the 12 A continuous current rating aligns with the thermal constraints of the final assembly environment.

Single FETs, MOSFETs Selection Notes

Select this component when a 1200 V rated switch with moderate current handling is required. The 1.25 Ohm on-resistance represents a trade-off between conduction loss and switching speed. Consider the TO-247 [B] package size for mechanical mounting requirements and available heatsinking surface area in the system design.

Single FETs, MOSFETs Part Context

This part belongs to the Microchip FREDFET MOS7 family, which integrates fast-recovery diode characteristics directly into the MOSFET structure. This integration eliminates the need for external anti-parallel diodes in certain topologies, reducing component count and parasitic inductance in high-performance power conversion designs.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include other 1200 V, 12 A N-Channel MOSFETs in TO-247 packages from Microchip or competitors, provided they match the pinout and thermal characteristics. Verify gate charge and threshold voltage compatibility before substitution.