APT12080LVRG

Single FETs, MOSFETs Overview

The APT12080LVRG is a single N-Channel Power MOSFET manufactured by Microchip Technology, utilizing Silicon technology and the POWER MOS 5® process. It features a Drain-Source Voltage (Vds) of 1200 V and a continuous Drain Current (Id) of 16 A at case temperature. The device exhibits a maximum On-State Resistance (Rds(on)) of 800 mΩ. It is housed in a TO-264-3 (TO-264 L) through-hole package with a power dissipation rating of 520 W. The gate-source voltage range is ±30 V, with a typical threshold voltage of 2 V and a total gate charge of approximately 500 nC. Operating temperatures range from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• High-voltage capability with 1200 V breakdown voltage for robust high-power switching applications.
• POWER MOS 5® technology integration providing optimized performance characteristics.
• Through-hole TO-264 package design suitable for high thermal dissipation requirements.

Single FETs, MOSFETs Applications

• Industrial motor control systems
• High-voltage DC-DC converters
• Power supply units

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'LVRG' against official Microchip documentation to confirm pinout and electrical tolerances. Ensure the procurement channel provides valid datasheets matching the part number. Confirm RoHS compliance status directly from the manufacturer's current product status reports before finalizing orders.

Single FETs, MOSFETs Selection Notes

Select this component when a 1200 V rating is required for high-voltage isolation. The 800 mΩ Rds(on) and 16 A current capacity define the conduction losses. The TO-264 package dictates the thermal management strategy and PCB footprint requirements. Compare these parameters against system voltage spikes and thermal constraints.

Single FETs, MOSFETs Part Context

This device belongs to the APT series of discrete semiconductors produced by Microchip Technology. It is categorized under Single FETs and MOSFETs within the broader transistor family. The product utilizes standard silicon fabrication techniques adapted for high-voltage power applications.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other 1200 V N-Channel MOSFETs in the TO-264 package. Verify that substitute parts meet or exceed the 16 A current rating and 800 mΩ resistance specifications. Check for identical pin configurations to ensure mechanical compatibility.

Single FETs, MOSFETs FAQ

What is the maximum drain-source voltage for the APT12080LVRG?

The maximum drain-source voltage (Vds) is 1200 V.

Does the APT12080LVRG support through-hole mounting?

Yes, it is available in a TO-264-3 package designed for through-hole installation.