Single Bipolar Transistors APT13003DI-G1 product image

APT13003DI-G1

$0.41
  • Description:TRANS NPN 450V 1.5A TO-251
  • Series:-

SKU:4e3f611d7730 Category: Brand:

  
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APT13003DI-G1 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is TRANS NPN 450V 1.5A TO-251. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for APT13003DI-G1

  • Description:TRANS NPN 450V 1.5A TO-251
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tube,Tube
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):1.5 A
  • Voltage - Collector Emitter Breakdown (Max):450 V
  • Vce Saturation (Max) @ Ib, Ic:400mV @ 250mA, 1A
  • Current - Collector Cutoff (Max):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:5 @ 1A, 2V
  • Power - Max:24 W
  • Frequency - Transition:4MHz
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-251-3 Short Leads, IPAK, TO-251AA
  • Supplier Device Package:TO-251
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for APT13003DI-G1

APT13003DI-G1

Single Bipolar Transistors Overview

The APT13003DI-G1 is a silicon NPN high-voltage bipolar junction transistor manufactured by Diodes Incorporated. It is housed in a TO-92 three-pin through-hole package designed for general-purpose switching applications. The device features a collector-emitter voltage rating of 450V and a continuous collector current capacity of 1.5A. Key electrical parameters include a minimum DC current gain (hFE) of 5, a maximum power dissipation of 1.1W, and an operating temperature range from -65°C to +150°C. The component is RoHS compliant and lead-free.

Single Bipolar Transistors Feature Summary

  • High voltage capability with a 450V collector-emitter breakdown rating
  • Robust thermal performance supporting operation up to 150°C junction temperature
  • Standardized TO-92 through-hole packaging for easy integration into printed circuit boards

Single Bipolar Transistors Applications

  • General purpose switching circuits
  • Low power amplifier stages
  • Consumer electronics driver applications

Single Bipolar Transistors Procurement Notes

Verify the specific suffix against official Diodes Incorporated documentation to confirm exact binning and testing criteria. Confirm RoHS compliance status via the latest datasheet revision. Check for end-of-life notifications or product change notices that may affect long-term availability. Ensure the supplier provides traceable origin documents matching the manufacturer's specifications.

Single Bipolar Transistors Selection Notes

Select this component when a standard NPN transistor with moderate voltage handling and low cost is required. The TO-92 package limits power dissipation compared to larger packages, making it suitable for low-power tasks. Verify that the 1.5A current limit and 450V voltage rating align with the circuit design requirements before finalizing the bill of materials.

Single Bipolar Transistors Part Context

This part belongs to the APT13003 series of high-voltage NPN transistors produced by Diodes Incorporated. The series utilizes silicon technology optimized for cost-effective solutions in consumer and industrial markets. The TO-92 variant offers a compact footprint suitable for space-constrained designs requiring reliable switching performance at elevated voltages.

Single Bipolar Transistors Replacement Considerations

Cross-reference with other Diodes Incorporated parts within the same APT13003 family for potential substitutes. Verify pinout compatibility and electrical parameter equivalence before substitution. Consult official replacement guides for any discontinued variants.

APT13003DI-G1APT13003DI-G1
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