APT13005TF-G1

Single Bipolar Transistors Overview

The APT13005TF-G1 is a high-voltage NPN power bipolar junction transistor manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in a TO-220F-3 through-hole package with an isolated flange mount. The device supports a maximum collector current of 4 A and a collector-emitter breakdown voltage of 700 V. Key electrical parameters include a collector-base voltage of 10 V, an emitter-base voltage of 9 V, and a transition frequency of 4 MHz. Power dissipation is rated at 28 W, with a saturation voltage of 900 mV at specified conditions. The component operates within a temperature range of -65°C to +150°C.

Single Bipolar Transistors Feature Summary

• High voltage capability utilizing multi-epitaxial planar technology for robust performance
• Cellular emitter structure with planar edge termination designed to enhance switching speeds
• Wide Reverse Biased Safe Operating Area (RBSOA) maintained alongside high-speed operation

Single Bipolar Transistors Applications

• Switch-mode power supplies
• Lighting applications
• General-purpose high-voltage switching circuits

Single Bipolar Transistors Procurement Notes

Verify the specific suffix G1 against official Diodes Incorporated documentation to confirm compliance status and revision history. Confirm that the TO-220F-3 package matches the required isolation specifications for the target thermal management design. Ensure the 700V rating aligns with system voltage requirements before integration.

Single Bipolar Transistors Selection Notes

Select this component when a high-voltage NPN transistor with fast switching characteristics is required in a through-hole configuration. The 700V rating distinguishes it from lower-voltage variants in the series. Consider the 28W power dissipation limit and the need for adequate heatsinking on the isolated flange for thermal management in continuous operation.

Single Bipolar Transistors Part Context

This part belongs to the APT13005 series of high-voltage power transistors. While other variants like the STF or DTG models exist, the TF suffix specifically denotes the TO-220F insulated package. This family is engineered for applications demanding high breakdown voltages combined with efficient switching performance in medium-power environments.

Single Bipolar Transistors Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source data. Verify compatibility with existing circuit designs if considering alternative high-voltage NPN transistors from other manufacturers.