APT130SM70B

Single FETs, MOSFETs Overview

The APT130SM70B is a Silicon Carbide (SiC) N-Channel Power MOSFET manufactured by Microsemi Corporation. It features a Drain-Source Voltage (VDSS) of 700V and a continuous drain current (ID) of 110A at a case temperature of 25°C, with a maximum pulsed drain current (IDM) of 262A. The device exhibits a typical on-resistance (RDS(on)) of 35mΩ at VGS = 20V and ID = 60A. Total power dissipation is rated at 556W at TC = 25°C. The component operates within a junction temperature range of -55°C to +175°C and utilizes a TO-247 package.

Single FETs, MOSFETs Feature Summary

• Utilizes silicon carbide technology for high-efficiency performance in high-voltage applications
• Features low on-resistance that remains virtually independent of ambient temperature
• Provides fast switching speed due to low internal gate resistance and capacitances
• Includes a stable and reliable body diode suitable for eliminating external free-wheeling diodes

Single FETs, MOSFETs Applications

• Photovoltaic inverters and converters
• Industrial motor drives
• Smart grid transmission and distribution systems
• Electric vehicle powertrains and chargers
• Induction heating and welding equipment

Single FETs, MOSFETs Procurement Notes

Verify the specific revision status of the datasheet, as the document indicates preliminary information. Confirm compatibility with TO-247 mounting hardware, specifically requiring a torque of 10 in·lbf or 1.1 N·m for the M3 or 6-32 screw. Ensure thermal management solutions support the specified linear derating factor and junction temperature limits during operation.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high breakdown voltage and low conduction losses at elevated temperatures. Consider the negative threshold voltage temperature coefficient when designing gate drive circuits to ensure stable turn-on characteristics across the operating temperature range. Evaluate the total gate charge requirements against the available gate driver capability to optimize switching transitions.

Single FETs, MOSFETs Part Context

This part belongs to Microsemi's silicon carbide power MOSFET product line, designed to outperform traditional silicon MOSFETs and IGBTs. The series targets high-voltage applications where system efficiency, compactness, and reduced total cost of ownership are critical. It serves as a direct replacement candidate for legacy silicon devices in demanding power conversion environments.

Single FETs, MOSFETs Replacement Considerations

When evaluating substitutes, verify that the alternative device matches the 700V rating and TO-247 footprint. Compare the on-resistance and gate charge specifications to ensure equivalent switching performance. Confirm that the substitute supports the required 175°C maximum junction temperature and compatible gate drive voltage levels.