APT15GP90BG

Overview

The APT15GP90BG is a single N-channel Power MOS 7 IGBT manufactured by Microsemi Corporation. It utilizes Punch Through technology and is housed in a TO-247 package with lead-free terminals. The device features a collector-emitter breakdown voltage of 900V, a continuous collector current of 43A at 25°C case temperature, and a total power dissipation of 250W. Key electrical parameters include a gate threshold voltage ranging from 3V to 6V, a maximum collector-emitter on-voltage of 3.9V at 15A and 25°C, and a typical total gate charge of 60nC at 15V. Switching characteristics are defined by turn-on delay times up to 14ns and turn-off delay times up to 55ns under standard test conditions.

Feature Summary

• Utilizes Punch Through technology for optimized high-frequency switching performance
• Features ultrafast tail current shutoff to minimize switching losses
• Includes a rated Switching Safe Operating Area (SSOA) for robust operation

Applications

• High frequency switchmode power supplies
• High voltage switching applications requiring low conduction loss
• Inductive switching circuits operating at elevated temperatures

Procurement Notes

Verify the component authenticity against the official Microsemi datasheet specifications before integration. Confirm that the ordering suffix 'G' corresponds to the required RoHS compliant and lead-free terminal finish as documented in the product release notes. Ensure thermal management designs account for the specified junction-to-case thermal resistance values provided in the mechanical characteristics section.

Selection Notes

Select this component when designing circuits requiring a 900V blocking capability with moderate current handling around 15A to 43A. Consider the specific gate charge requirements for driver selection, noting the typical 60nC value. Evaluate the thermal impedance curves to determine appropriate heatsinking for the intended duty cycle and ambient temperature conditions.

Part Context

This part belongs to the POWER MOS 7 series of Insulated Gate Bipolar Transistors produced by Advanced Power Technology, now part of Microsemi. The series is characterized by its punch-through structure designed to reduce conduction losses while maintaining fast switching speeds suitable for modern power electronics.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation.