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The APT15GT60KRG is a Thunderblot IGBT manufactured by Microsemi Corporation, housed in a TO-220 package. It features Non-Punch Through technology for superior ruggedness and ultrafast switching. Key electrical parameters include a collector-emitter breakdown voltage of 600V, a continuous collector current of 42A at TC=25°C, and a maximum gate-emitter voltage of ±30V. The device exhibits a typical on-state voltage of 2.0V at 15A and 25°C. Switching characteristics at TJ=25°C with VCC=400V, IC=15A, and RG=10Ω show turn-on energy (Eon) of 150µJ and turn-off energy (Eoff) of 195µJ. Total power dissipation is rated at 184W.
Verify the component status as the datasheet indicates potential obsolescence or discontinuation. Confirm RoHS compliance via the 'G' suffix designation. Ensure proper electrostatic discharge handling procedures are followed during storage and assembly due to device sensitivity.
Select this component for applications requiring high-voltage blocking and fast switching speeds. Consider the thermal impedance and power dissipation limits when designing heat sinks. Verify that the required collector current and voltage ratings align with the circuit's peak operating conditions.
This part belongs to the Thunderblot IGBT series from Advanced Power Technology (APT), now part of Microsemi. The series is characterized by its non-punch-through design, which enhances short-circuit withstand capability and switching performance compared to standard punch-through devices.
Check for direct replacements within the APT/Microsemi portfolio such as the APT15GT60KR. Evaluate alternative manufacturers offering similar 600V, TO-220 packaged IGBTs with comparable current and switching specifications if availability is an issue.
The 'G' suffix denotes that the device is RoHS compliant and has lead-free terminal finishes.
It is a single IGBT with an integrated Fast Recovery Epitaxial Diode (FRED) in a TO-220 package.
The operating and storage junction temperature range is -55°C to +150°C.