APT17F100S

$8.55

Description：MOSFET N-CH 1000V 17A D3PAK
Series：POWER MOS 8™
Mfr：Microchip Technology
Package：Tube

SKU:8a5a672a67f7 Category: Single FETs, MOSFETs Brand: Microchip Technology

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Product introduction

APT17F100S is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 1000V 17A D3PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APT17F100S

Description：MOSFET N-CH 1000V 17A D3PAK
Series：POWER MOS 8™
Mfr：Microchip Technology
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：1000 V
Current - Continuous Drain (Id) @ 25°C：17A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：780mOhm @ 9A, 10V
Vgs(th) (Max) @ Id：5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：150 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：4845 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：625W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：D3PAK
Package / Case：TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

Single FETs, MOSFETs datasheet and documents for APT17F100S

APT17F100S

Single FETs, MOSFETs Overview

The APT17F100S is a single N-Channel Power MOSFET from the POWER MOS 8™ series, manufactured by Microchip Technology. It utilizes silicon technology and is housed in a D3PAK-3 (TO-268) surface-mount package. The device features a drain-source voltage rating of 1000 V and a continuous drain current of 17 A. Key electrical parameters include an on-state resistance of 780 mΩ, a gate-source voltage limit of ±30 V, and a threshold voltage of 2.5 V. It supports a power dissipation of 625 W, operates within a temperature range of -55°C to +150°C, and has a typical turn-on delay time of 28 ns.

Single FETs, MOSFETs Feature Summary

High-voltage capability with a 1000 V drain-source breakdown voltage for robust operation in demanding environments.
Fast switching performance characterized by low turn-on and fall times suitable for high-frequency applications.
Enhanced thermal management through a D3PAK-3 package supporting up to 625 W power dissipation.

Single FETs, MOSFETs Applications

High-voltage DC-DC converters
Induction heating systems
Uninterruptible power supplies (UPS)
Motor control circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision and ordering suffixes directly with Microchip Technology or authorized distributors to ensure component authenticity and compliance with current RoHS standards. Confirm that the D3PAK-3 footprint matches your PCB design requirements before finalizing procurement decisions.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring high voltage isolation and moderate current handling. Ensure the gate drive circuitry can accommodate the specified threshold voltage and charge requirements. Verify that the thermal design adequately handles the 625 W dissipation rating under expected operating conditions.

Single FETs, MOSFETs Part Context

This part belongs to the POWER MOS 8™ family, which integrates advanced trench gate technology to improve switching speed and reduce conduction losses. It is designed for general-purpose high-voltage switching applications where reliability and efficiency are critical.

Single FETs, MOSFETs Replacement Considerations

Check for direct substitutes such as the APT14F100S or APT18M100S if current ratings differ slightly. Ensure any replacement maintains the same D3PAK-3 package and 1000 V voltage rating to fit existing board layouts without modification.